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SMDA24CDR2G

Onsemi

SMDA24CDR2G by Onsemi

SMDA24CDR2G by Onsemi is a Transient Suppression Device with 4 separate elements, each with a max clamping voltage of 55V. It operates b/w -55 °C to 150°C and has a breakdown voltage of 26.7V, making it ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 37,000 parts In-Stock

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37,000

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Vyrian

USA . 12,013 parts In-Stock

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Digiode

USA . 955 parts In-Stock

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955

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Distributors (Availability)

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.098

100+ parts

$0.089

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$0.080

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350

$0.098

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$0.080

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AZTECH Wire

Italy . 207 parts In-Stock

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$8.350

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207

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Component Stockers USA

USA . 758 parts In-Stock

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$99.990

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758

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Kepictronics

USA . 85,000 parts In-Stock

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85,000

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SupplyDigital Components

Austria . 5,125 parts In-Stock

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Problanco Electronics

Mexico . 5,079 parts In-Stock

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TANS Electronics

Latvia . 4,293 parts In-Stock

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Corphita

USA . 1,202 parts In-Stock

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Kulean Microsystems

USA . 866 parts In-Stock

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Futuretech Components

Singapore . 850 parts In-Stock

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UHIMA Technologies

Türkiye . 505 parts In-Stock

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Corohmni

South Africa . 449 parts In-Stock

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EMSNET (Excess)

USA . 340 parts In-Stock

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340

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Overview

Enhance your electronic devices with the SMDA24CDR2G by Onsemi, a top-quality Transient Suppression Device that guarantees superior protection against voltage spikes and surges. Manufactured by Onsemi, a renowned leader in the industry, this product offers unmatched reliability and durability. Ideal for a wide range of applications, this device ensures uninterrupted performance and peace of mind. Upgrade your electronics with the SMDA24CDR2G and experience the benefits of cutting-edge technology at an unbeatable value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and reliability of the product, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

High power dissipation capability allows the device to handle transient surges effectively, protecting the connected equipment.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures the device can function efficiently in various environmental conditions.

Minimum Breakdown Voltage: 26.7 V

Low breakdown voltage ensures effective protection against voltage spikes and surges, safeguarding the connected circuits.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diodes are specifically designed for suppressing transient voltage spikes, making them ideal for transient suppression devices.

Technical Specifications

Transient Suppression Devices SMDA24CDR2G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

26.7 V

Maximum Clamping Voltage:

55 V

Config:

SEPARATE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

4

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMDA24CDR2G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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