Loading...

SMDA12CDR2G

Onsemi

SMDA12CDR2G by Onsemi

SMDA12CDR2G by Onsemi is a Transient Suppression Device with 4 separate elements, each with a max clamping voltage of 24V. It operates in temperatures ranging from -55 °C to 150°C and has a min breakdown voltage of 13.3V. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

$1.413

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 22,971 parts In-Stock

1+ parts

-

100+ parts

$1.360

1k+ parts

$1.130

10k+ parts

$1.010

22,971

-

$1.360

$1.130

$1.010

DigiKey

USA . 22,971 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.700

10k+ parts

-

22,971

-

-

$1.700

-

Verical

USA . 22,971 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.413

10k+ parts

$1.262

22,971

-

-

$1.413

$1.262

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,051 parts In-Stock

1+ parts

$1.112

100+ parts

-

1k+ parts

-

10k+ parts

-

1,051

$1.112

-

-

-

Vyrian

USA . 851 parts In-Stock

1+ parts

$1.170

100+ parts

-

1k+ parts

-

10k+ parts

-

851

$1.170

-

-

-

Chip Stock

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

45,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,154 parts In-Stock

1+ parts

$1.053

100+ parts

-

1k+ parts

-

10k+ parts

-

1,154

$1.053

-

-

-

Corohmni

South Africa . 166 parts In-Stock

1+ parts

$1.170

100+ parts

-

1k+ parts

-

10k+ parts

-

166

$1.170

-

-

-

Kepictronics

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25,000

-

-

-

-

Continental Prestige Electronics

USA . 23,371 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.938

10k+ parts

-

23,371

-

-

$0.938

-

SupplyDigital Components

Austria . 7,107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,107

-

-

-

-

Problanco Electronics

Mexico . 6,242 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,242

-

-

-

-

TANS Electronics

Latvia . 5,393 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,393

-

-

-

-

UHIMA Technologies

Türkiye . 791 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

791

-

-

-

-

Kulean Microsystems

USA . 207 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

207

-

-

-

-

Overview

Enhance the protection of your electronic devices with the SMDA12CDR2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality transient suppression devices that ensure reliability and safety. This product is designed with advanced technology to provide bidirectional protection with a maximum clamping voltage of 24V, making it ideal for a wide range of applications. Invest in the SMDA12CDR2G to safeguard your valuable equipment and enjoy peace of mind knowing that you are getting superior performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides excellent protection and durability for the device, ensuring long-term reliability.

Config: SEPARATE, 4 ELEMENTS

Having 4 separate elements allows for efficient and targeted transient suppression, enhancing the overall performance of the device.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, especially in compact electronic designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

With a high power dissipation capability, this device can effectively handle transient surges and protect sensitive components in the circuit.

Package Shape: RECTANGULAR

Rectangular shape enables easy integration into various electronic systems and helps in optimizing space usage.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting the device to different parts of the circuit, improving overall functionality.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures the device can perform reliably in a wide range of environmental conditions.

Minimum Operating Temperature: -55 °C

Low operating temperature ensures the device remains functional even in extreme cold conditions, enhancing its overall reliability.

Terminal Finish: Tin (Sn)

Tin finish on terminals provides good conductivity and corrosion resistance, ensuring stable performance over time.

Minimum Breakdown Voltage: 13.3 V

Having a minimum breakdown voltage of 13.3V ensures effective suppression of transient voltage spikes below this level, protecting sensitive components in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode enables efficient clamping of transient voltages, safeguarding other components in the circuit.

Technology: AVALANCHE

Avalanche technology allows for quick response to transient surges, reducing the risk of damage to connected devices.

Terminal Form: GULL WING

Gull wing terminal form provides easy soldering and installation, making the device suitable for automated assembly processes.

No. of Elements: 4

Having 4 elements enhances the overall suppression capability of the device, providing better protection for the circuit.

Maximum Repetitive Peak Reverse Voltage: 12 V

With a maximum voltage rating of 12V, this device can effectively suppress repetitive peak reverse voltages up to this level.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the device to suppress transient spikes in both directions, offering comprehensive protection for the circuit.

Maximum Clamping Voltage: 24 V

Clamping voltage of 24V ensures that any transient spikes above this level are effectively limited, preventing damage to connected components.

Diode Element Material: SILICON

Silicon diode element material offers excellent performance characteristics, ensuring efficient suppression of transient voltages.

Technical Specifications

Transient Suppression Devices SMDA12CDR2G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

13.3 V

Maximum Clamping Voltage:

24 V

Config:

SEPARATE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

4

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMDA12CDR2G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20