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SL05T3

Onsemi

SL05T3 by Onsemi

SL05T3 by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V peak reverse voltage and 11V clamping voltage. It has a max power dissipation of 300W and breakdown voltage of 7V, making it ideal for transient suppression in electronic circuits. This small outline device is surface mountable and features avalanche technology for efficient protection against voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 30,000 parts In-Stock

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Digiode

USA . 2,188 parts In-Stock

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Vyrian

USA . 687 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Ampacity Inc.

Singapore . 622 parts In-Stock

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$0.010

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622

$0.010

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AZTECH Wire

Italy . 836 parts In-Stock

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$12.674

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Kulean Microsystems

USA . 5,618 parts In-Stock

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Problanco Electronics

Mexico . 4,760 parts In-Stock

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SupplyDigital Components

Austria . 2,264 parts In-Stock

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TANS Electronics

Latvia . 1,678 parts In-Stock

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Corphita

USA . 1,338 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Corohmni

South Africa . 387 parts In-Stock

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UHIMA Technologies

Türkiye . 36 parts In-Stock

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Overview

Enhance your electronic devices with the SL05T3 by Onsemi, a top-of-the-line transient suppression device designed to provide quality protection against voltage spikes and surges. Manufactured by Onsemi, a renowned leader in the industry, this product offers unmatched reliability and durability. Ideal for a wide range of applications, the SL05T3 ensures smooth and uninterrupted performance, giving you peace of mind knowing your equipment is safeguarded. Upgrade your electronics with this innovative solution and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various environmental conditions.

Config: SINGLE

Having a single configuration simplifies installation and maintenance.

Surface Mount: YES

Being surface mountable allows for easy integration into circuit boards, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

With a high peak power dissipation capacity, this device can handle transient overvoltage events effectively.

Nominal Breakdown Voltage: 7 V

The nominal breakdown voltage of 7 V provides protection against voltage surges up to that level.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to place and secure within a circuit design.

No. of Terminals: 3

Having 3 terminals ensures stable connectivity within the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact designs.

Terminal Finish: TIN LEAD

The tin-lead finish provides good solderability and ensures a reliable connection.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit layout and connection options.

Maximum Power Dissipation: 0.225 W

This device has a low power dissipation, making it energy-efficient and reducing heat generation.

Minimum Breakdown Voltage: 6 V

The minimum breakdown voltage of 6 V ensures protection against lower voltage surges as well.

Peak Reflow Temperature °C: 235

The high peak reflow temperature allows for reliable soldering during assembly.

Maximum Breakdown Voltage: 8 V

With a maximum breakdown voltage of 8 V, this device provides protection against higher voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type ensures efficient suppression of transient voltage spikes.

Technology: AVALANCHE

The avalanche technology used in this device allows for quick response and high surge handling capabilities.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and secure mounting on the circuit board.

Maximum Repetitive Peak Reverse Voltage: 5 V

This device can handle repetitive peak reverse voltages up to 5 V, providing continuous protection.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only allows current flow in one direction, enhancing its protective capabilities.

Maximum Clamping Voltage: 11 V

With a maximum clamping voltage of 11 V, this device can limit the voltage spike to a safe level.

Diode Element Material: SILICON

The use of silicon as the diode element material offers high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SL05T3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7 V

Maximum Clamping Voltage:

11 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SL05T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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