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SL05T1

Onsemi

SL05T1 by Onsemi

SL05T1 by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V peak reverse voltage and 11V clamping voltage. It has a max power dissipation of 0.225W and breakdown voltage of 7V, making it ideal for transient suppression in electronic circuits. The device comes in a small outline package with gull wing terminals for surface mount applications.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,832 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

1,832

-

$0.119

$0.099

$0.088

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,250 parts In-Stock

1+ parts

$0.093

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1,250

$0.093

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Chip Stock

USA . 152,522 parts In-Stock

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152,522

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Zilex Electronics Inc.

Canada . 9,920 parts In-Stock

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9,920

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ComSIT Distribution GmbH

Germany . 5,805 parts In-Stock

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5,805

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Vyrian

USA . 4,626 parts In-Stock

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4,626

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Lantek

USA . 3,000 parts In-Stock

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3,000

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Bristol Electronics

USA . 1,926 parts In-Stock

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1,926

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Distributors (Availability)

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Corphita

USA . 1,334 parts In-Stock

1+ parts

$0.088

100+ parts

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1,334

$0.088

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Corohmni

South Africa . 370 parts In-Stock

1+ parts

$0.098

100+ parts

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370

$0.098

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Component Stockers USA

USA . 1,414 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

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-

1,414

$0.100

$0.090

$0.080

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AZTECH Wire

Italy . 36 parts In-Stock

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$16.950

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36

$16.950

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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RC Electronics

USA . 78,000 parts In-Stock

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Kulean Microsystems

USA . 8,261 parts In-Stock

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8,261

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SupplyDigital Components

Austria . 7,575 parts In-Stock

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Kepictronics

USA . 5,709 parts In-Stock

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Problanco Electronics

Mexico . 3,050 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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TANS Electronics

Latvia . 2,157 parts In-Stock

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2,157

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UHIMA Technologies

Türkiye . 463 parts In-Stock

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463

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Overview

Protect your electronics with the SL05T1 by Onsemi. This Transient Suppression Device offers superior quality and reliability, thanks to Onsemi's reputation for excellence in manufacturing. Perfect for a variety of applications, this product provides valuable protection against voltage surges and spikes, ensuring the longevity of your equipment. Invest in the SL05T1 for peace of mind and safeguard your devices from potential damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package material provides good insulation and protection against environmental factors, making the device durable and long-lasting.

Config: SINGLE

Single configuration allows for easy installation and replacement of the transient suppression device.

Surface Mount: YES

Surface mount capability enables easy and convenient mounting onto circuit boards, saving space and simplifying assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

High power dissipation capability ensures that the device can handle sudden surge currents and protect sensitive electronics effectively.

Nominal Breakdown Voltage: 7 V

The nominal breakdown voltage of 7 V ensures reliable protection against overvoltage events within the specified range.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and alignment during installation, ensuring proper functionality of the device.

No. of Terminals: 3

Having 3 terminals provides secure connections and stability for the device within the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style minimizes space requirements, making it suitable for compact electronic designs and applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity, ensuring reliable connections within the circuit.

Terminal Position: DUAL

Dual terminal position allows for easy integration and connection within the circuit, enhancing versatility and ease of use.

Maximum Power Dissipation: 0.225 W

Low power dissipation helps in reducing heat generation and energy consumption, improving the overall efficiency of the device.

Minimum Breakdown Voltage: 6 V

Having a minimum breakdown voltage of 6 V ensures protection against voltage spikes and surges that fall within the specified range.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C enables reliable and secure soldering during assembly, ensuring proper functionality of the device.

Maximum Breakdown Voltage: 8 V

Maximum breakdown voltage of 8 V provides ample protection against high voltage transients, safeguarding sensitive components in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type offers effective transient suppression capabilities, protecting the circuit from voltage spikes and surges.

Technology: AVALANCHE

Avalanche technology allows for high energy absorption and rapid response to transient events, enhancing the protective performance of the device.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable connections within the circuit, ensuring stable performance under varying conditions.

Maximum Repetitive Peak Reverse Voltage: 5 V

Maximum repetitive peak reverse voltage of 5 V offers consistent protection against reverse voltage conditions, maintaining the integrity of the circuit.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device suppresses voltage spikes in one direction only, suitable for applications with specific polarity requirements.

Maximum Clamping Voltage: 11 V

Maximum clamping voltage of 11 V limits the voltage across the protected circuit, preventing damage to sensitive components during transient events.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and stability, ensuring consistent performance and effective transient suppression over time.

Technical Specifications

Transient Suppression Devices SL05T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7 V

Maximum Clamping Voltage:

11 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SL05T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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