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SBR640CTT4G

Onsemi

SBR640CTT4G by Onsemi

SBR640CTT4G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage, 0.9V max forward voltage, and 3A max output current. It is commonly used in fast recovery power applications due to its small outline package style and common cathode configuration. Operating temperature ranges from -65 °C to 175°C.

Median Price

$0.755

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 17,500 parts In-Stock

1+ parts

-

100+ parts

$0.724

1k+ parts

$0.601

10k+ parts

$0.535

17,500

-

$0.724

$0.601

$0.535

DigiKey

USA . 17,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.900

10k+ parts

-

17,500

-

-

$0.900

-

Farnell

UK . 17,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.470

17,500

-

-

-

$0.470

Verical

USA . 17,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.786

10k+ parts

$0.701

17,500

-

-

$0.786

$0.701

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 373 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

-

10k+ parts

-

373

$0.470

-

-

-

Digiode

USA . 580 parts In-Stock

1+ parts

$0.591

100+ parts

-

1k+ parts

-

10k+ parts

-

580

$0.591

-

-

-

Bristol Electronics

USA . 4,684 parts In-Stock

1+ parts

$1.500

100+ parts

$0.555

1k+ parts

$0.390

10k+ parts

-

4,684

$1.500

$0.555

$0.390

-

DigiKey Marketplace

USA . 17,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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17,500

-

-

-

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Dan-Mar Components

USA . 4,684 parts In-Stock

1+ parts

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100+ parts

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4,684

-

-

-

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ACDS - Activité Composants Distribution Service

France . 2,385 parts In-Stock

1+ parts

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100+ parts

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2,385

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 62 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

-

10k+ parts

-

62

$0.470

-

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-

Corphita

USA . 1,190 parts In-Stock

1+ parts

$0.560

100+ parts

-

1k+ parts

-

10k+ parts

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1,190

$0.560

-

-

-

Microchip USA

USA . 483 parts In-Stock

1+ parts

$3.900

100+ parts

-

1k+ parts

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483

$3.900

-

-

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Continental Prestige Electronics

USA . 17,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.488

10k+ parts

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17,500

-

-

$0.488

-

Problanco Electronics

Mexico . 8,126 parts In-Stock

1+ parts

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100+ parts

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8,126

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TANS Electronics

Latvia . 5,028 parts In-Stock

1+ parts

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5,028

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SupplyDigital Components

Austria . 3,335 parts In-Stock

1+ parts

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3,335

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Kulean Microsystems

USA . 1,572 parts In-Stock

1+ parts

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100+ parts

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1,572

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-

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UHIMA Technologies

Türkiye . 786 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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786

-

-

-

-

Overview

Discover the SBR640CTT4G by Onsemi, a cutting-edge diode & rectifier designed for fast recovery power applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 40V, this Schottky technology-based product offers superior performance and efficiency. Manufactured by Onsemi, a trusted name in the industry, this diode promises reliability and durability. Ideal for a wide range of electronic devices, the SBR640CTT4G is the perfect choice for those looking for high-quality components that deliver exceptional results. Upgrade your projects with this top-of-the-line diode and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to environmental factors, making the product suitable for a wide range of applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient power distribution and management in circuit designs.

Surface Mount: YES

Surface mount capability enables easy and compact integration onto circuit boards, saving space and simplifying assembly processes.

Maximum Reverse Current: 100 uA

Low reverse current ensures minimal power loss and improved efficiency during operation.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy placement and mounting within electronic systems.

No. of Terminals: 2

Having only 2 terminals simplifies the installation and connection process, reducing the chances of errors in setup.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is ideal for compact electronic devices and applications with limited physical room.

Application: FAST RECOVERY POWER

Designed for fast recovery power applications, ensuring quick response times and efficient power handling capability.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in various environmental conditions and temperature ranges.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the product remains functional even in extreme cold environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and solderability, ensuring secure and reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces chances of errors during assembly.

Case Connection: CATHODE

Cathode case connection helps with efficient current flow and simplifies circuit design configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature minimizes the risk of damage during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for reliable soldering and rework procedures.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high-quality and reliability for automotive electronics applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type provides efficient rectification of AC to DC power, making it suitable for power supply and conversion applications.

Maximum Forward Voltage (VF): 0.9 V

Low maximum forward voltage drop minimizes power loss and heat generation during operation.

Maximum Output Current: 3 A

High maximum output current capability allows for handling of higher power loads and efficient power distribution.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, enhancing efficiency and performance.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and secure attachment to circuit boards.

No. of Elements: 2

Having 2 elements allows for more flexible circuit design and power handling capabilities.

Maximum Repetitive Peak Reverse Voltage: 40 V

High maximum repetitive peak reverse voltage rating ensures reliable operation and protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 75 A

High maximum non-repetitive peak forward current capability allows for handling of short-term power surges and spikes.

Diode Element Material: SILICON

Silicon diode element material provides good thermal stability and efficient rectification properties for reliable power conversion.

Technical Specifications

Diodes & Rectifiers SBR640CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

100 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBR640CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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