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SBR60A200CT

Diodes Incorporated

SBR60A200CT by Diodes Incorporated

The Diodes Incorporated SBR60A200CT is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.05 us. Ideal for super fast soft recovery applications, it has a max output current of 30 A and a max forward voltage of 0.77 V.

Median Price

$4.200

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 21 parts In-Stock

1+ parts

$4.200

100+ parts

$2.140

1k+ parts

$1.820

10k+ parts

-

21

$4.200

$2.140

$1.820

-

DigiKey

USA . 17 parts In-Stock

1+ parts

$4.240

100+ parts

$2.282

1k+ parts

$1.825

10k+ parts

-

17

$4.240

$2.282

$1.825

-

Verical

USA . 10,550 parts In-Stock

1+ parts

-

100+ parts

$1.825

1k+ parts

-

10k+ parts

-

10,550

-

$1.825

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 4,202 parts In-Stock

1+ parts

$5.088

100+ parts

-

1k+ parts

$4.885

10k+ parts

$4.885

4,202

$5.088

-

$4.885

$4.885

Microchip USA

USA . 9,256 parts In-Stock

1+ parts

$21.350

100+ parts

$21.220

1k+ parts

$21.160

10k+ parts

$21.090

9,256

$21.350

$21.220

$21.160

$21.090

Lixinc

USA . 18,253 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,253

-

-

-

-

Perfect Parts

USA . 127 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

127

-

-

-

-

Overview

Looking for a reliable and high-quality diode for your circuit design needs? Look no further than the SBR60A200CT by Diodes Incorporated. With a reputation for excellence in the industry, Diodes Incorporated delivers top-notch products that meet the highest standards. The SBR60A200CT is perfect for applications requiring super fast soft recovery, offering a maximum output current of 30A and a maximum repetitive peak reverse voltage of 200V. Trust in Diodes Incorporated for all your diode and rectifier needs, and experience the value and benefits our products can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration into circuits that require a common cathode configuration with 2 elements.

Maximum Reverse Recovery Time: 0.05 us

Enables fast switching speeds, making it suitable for applications requiring quick response times.

Terminal Finish: MATTE TIN

Provides a reliable connection with low electrical resistance for optimal performance.

Maximum Operating Temperature: 175 °C

Ensures the diodes can operate in high temperature environments without performance degradation.

Maximum Repetitive Peak Reverse Voltage: 200 V

Suitable for applications requiring voltage protection due to its high reverse voltage capability.

Maximum Output Current: 30 A

Can handle high current loads, making it suitable for power electronics applications.

Technical Specifications

Diodes & Rectifiers SBR60A200CT attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Application:

SUPER FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.77 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBR60A200CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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