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SB0509V

Onsemi

SB0509V by Onsemi

SB0509V by Onsemi is a surface mount diode with a max reverse recovery time of 0.02 us and a max reverse current of 30 uA. It has a reverse test voltage of 45 V, making it suitable for applications requiring fast switching speeds and low power consumption in temperature range from -55 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,206 parts In-Stock

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Digiode

USA . 931 parts In-Stock

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Kulean Microsystems

USA . 7,744 parts In-Stock

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TANS Electronics

Latvia . 1,813 parts In-Stock

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SupplyDigital Components

Austria . 988 parts In-Stock

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Problanco Electronics

Mexico . 975 parts In-Stock

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UHIMA Technologies

Türkiye . 244 parts In-Stock

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Corohmni

South Africa . 223 parts In-Stock

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Corphita

USA . 149 parts In-Stock

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Overview

Experience the superior quality of the SB0509V by Onsemi, a top-tier manufacturer known for innovative solutions in the electronics industry. This Surface Mount diode offers lightning-fast reverse recovery time, ensuring efficiency and reliability in various applications. From power supplies to signal processing, this diode provides unmatched performance, delivering value and benefits to customers seeking top-notch components for their projects. Trust Onsemi to deliver cutting-edge technology that enhances your designs and surpasses expectations.

Feature Benefit Bullets

Surface Mount: YES

Easy to install on PCBs without the need for additional components or soldering.

Maximum Reverse Recovery Time: 0.02 us

Provides high efficiency and improved performance in applications requiring fast switching speeds.

Maximum Reverse Current: 30 uA

Ensures low power consumption and minimal leakage current, making it suitable for low power applications.

Reverse Test Voltage: 45 V

Provides a higher safety margin and protection against reverse voltage spikes.

Maximum Operating Temperature: 125 °C

Can withstand high temperature environments, making it suitable for a wide range of operating conditions.

Minimum Operating Temperature: -55 °C

Can operate in cold temperature settings without compromising performance.

Maximum Forward Voltage (VF): 0.49 V

Low forward voltage drop ensures efficient power conversion and reduced energy loss.

Maximum Repetitive Peak Reverse Voltage: 90 V

Can handle high reverse voltages, making it suitable for applications with varying voltage requirements.

Technical Specifications

Other Function Diodes SB0509V attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.49 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

90 V

Maximum Reverse Current:

30 uA

Maximum Reverse Recovery Time:

.02 us

Reverse Test Voltage:

45 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SB0509V Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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