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SA5230DR2

Onsemi

SA5230DR2 by Onsemi

SA5230DR2 by Onsemi is an Operational Amplifier with a max input offset voltage of 4000 uV and nominal common mode reject ratio of 95 dB. It operates within a temperature range of -40 to 85 °C and has a unity gain bandwidth of 600 kHz. Ideal for industrial applications requiring precise signal amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 39,000 parts In-Stock

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Vyrian

USA . 1,768 parts In-Stock

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Digiode

USA . 844 parts In-Stock

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Vigor

Singapore . 9,077 parts In-Stock

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Problanco Electronics

Mexico . 8,207 parts In-Stock

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SupplyDigital Components

Austria . 6,552 parts In-Stock

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TANS Electronics

Latvia . 6,308 parts In-Stock

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Microchip USA

USA . 5,061 parts In-Stock

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Kulean Microsystems

USA . 3,367 parts In-Stock

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Corphita

USA . 2,493 parts In-Stock

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UHIMA Technologies

Türkiye . 817 parts In-Stock

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Corohmni

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Overview

Unleash the power of precision with the SA5230DR2 by Onsemi. Crafted by a trusted manufacturer in the industry, this operational amplifier offers unparalleled quality and reliability for a wide range of applications. From industrial to automotive settings, this versatile Op Amp provides exceptional performance with its advanced technology and programmable power capabilities. Elevate your projects with the value and benefits that only Onsemi can deliver. Experience the difference with the SA5230DR2 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 4000 uV

Allows for precise and accurate input signal processing.

Nominal Common Mode Reject Ratio: 95 dB

Ensures excellent rejection of common mode noise for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 7.5

Operates effectively within a standard supply voltage range for compatibility with various systems.

Minimum Voltage Gain: 50000

Provides high voltage gain, allowing for amplification of weak signals with minimal distortion.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, making it suitable for industrial applications.

Technology: BIPOLAR

Utilizes bipolar technology for optimal performance in terms of speed and accuracy.

Amplifier Type: OPERATIONAL AMPLIFIER

Designed specifically for amplifying signals accurately and efficiently in various electronic circuits.

Technical Specifications

Operational Amplifiers (Op Amps) SA5230DR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

1.8/15/±.9/±7.5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Programmable Power:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

600 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

95 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

50000

Nominal Slew Rate:

0.25 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

7.5 V

Maximum Supply Voltage:

9 V

Maximum Negative Supply Voltage:

-7.5 V

Minimum Negative Supply Voltage:

-9 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.7 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

SA5230DR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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