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S3AB

Onsemi

S3AB by Onsemi

The Onsemi S3AB is a single rectifier diode with a max reverse recovery time of 1.5 us and a max output current of 3A. It is designed for applications requiring a small outline package, such as automotive electronics, with an operating temperature range from -55 to 150°C.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

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10k+ parts

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2

$0.085

-

-

-

Rochester

USA . 3,330 parts In-Stock

1+ parts

-

100+ parts

$0.176

1k+ parts

$0.146

10k+ parts

$0.131

3,330

-

$0.176

$0.146

$0.131

Verical

USA . 3,330 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$0.163

3,330

-

-

-

$0.163

DigiKey

USA . 2,684 parts In-Stock

1+ parts

-

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$0.136

2,684

-

-

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$0.136

Chip1Stop

Japan . 2 parts In-Stock

1+ parts

-

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2

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Distributors (In-Stock)

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Vyrian

USA . 93,131 parts In-Stock

1+ parts

$0.030

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93,131

$0.030

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Digiode

USA . 1,745 parts In-Stock

1+ parts

$0.082

100+ parts

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1,745

$0.082

-

-

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Chip Stock

USA . 127,500 parts In-Stock

1+ parts

-

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127,500

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-

-

-

Kruse Electronics AG

Switzerland . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.018

3,000

-

-

-

$0.018

Bristol Electronics

USA . 44 parts In-Stock

1+ parts

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44

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 481 parts In-Stock

1+ parts

$0.030

100+ parts

-

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481

$0.030

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Ampacity Inc.

Singapore . 1,452 parts In-Stock

1+ parts

$0.056

100+ parts

-

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1,452

$0.056

-

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Corphita

USA . 2,087 parts In-Stock

1+ parts

$0.077

100+ parts

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2,087

$0.077

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Metaverse IC Inc.

Canada . 100,000 parts In-Stock

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100,000

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QUARKTWIN TECHNOLOGY LTD

USA . 24,348 parts In-Stock

1+ parts

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24,348

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TANS Electronics

Latvia . 7,329 parts In-Stock

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7,329

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SupplyDigital Components

Austria . 7,003 parts In-Stock

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7,003

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Kulean Microsystems

USA . 5,975 parts In-Stock

1+ parts

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5,975

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Supply Digital

USA . 765 parts In-Stock

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765

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UHIMA Technologies

Türkiye . 449 parts In-Stock

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449

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Problanco Electronics

Mexico . 272 parts In-Stock

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272

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Perfect Parts

USA . 11 parts In-Stock

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11

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Overview

Discover the cutting-edge S3AB diode by Onsemi, a top-tier manufacturer renowned for producing high-quality components. This versatile product falls under the Diodes & Rectifiers category and boasts a myriad of applications across various industries. With a focus on delivering value and reliability, the S3AB offers customers unmatched performance, efficiency, and durability. Experience seamless operation and enhanced functionality with this innovative solution that meets the highest industry standards. Elevate your projects with the S3AB diode and unleash its full potential today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-term reliability.

Maximum Reverse Recovery Time: 1.5 us

Faster reverse recovery time allows for efficient performance in high-speed applications.

Maximum Reverse Current: 10 uA

Low reverse current ensures minimal power loss and improved efficiency.

Maximum Operating Temperature: 150 °C

High operating temperature range makes it suitable for diverse environmental conditions.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold environments.

Reference Standard: AEC-Q101

Compliance with automotive quality standard ensures high reliability and performance in automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of AC to DC current.

Maximum Output Current: 3 A

High output current capacity makes it suitable for a variety of power applications.

Technical Specifications

Diodes & Rectifiers S3AB attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

1.5 us

Reverse Test Voltage:

50 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

S3AB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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