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S3528B-P

Onsemi

S3528B-P by Onsemi

S3528B-P by Onsemi is a CMOS active filter with 7 poles and 0 zeros, operating in a temperature range of 0 to 70 °C. It has a lowpass response type with an elliptic transfer characteristic and a max cutoff frequency of 20 kHz. This rectangular package filter is ideal for commercial applications requiring precise signal filtering.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 865 parts In-Stock

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Digiode

USA . 445 parts In-Stock

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445

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TANS Electronics

Latvia . 7,667 parts In-Stock

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Kulean Microsystems

USA . 5,487 parts In-Stock

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Problanco Electronics

Mexico . 4,504 parts In-Stock

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SupplyDigital Components

Austria . 2,713 parts In-Stock

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Corphita

USA . 2,012 parts In-Stock

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UHIMA Technologies

Türkiye . 894 parts In-Stock

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Corohmni

South Africa . 229 parts In-Stock

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Overview

Enhance your audio experience with the innovative S3528B-P by Onsemi. Known for their superior quality and cutting-edge technology, Onsemi delivers active filters that excel in performance and reliability. Ideal for a wide range of applications, this switched capacitor filter offers customers unparalleled value and benefits. From its precise response type to its versatile package style, the S3528B-P is designed to meet your filtering needs with ease. Elevate your projects with the exceptional capabilities of Onsemi's active filters.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the active filter.

Active Filter Type: SWITCHED CAPACITOR FILTER

Offers high efficiency and accurate filtering capabilities, making it suitable for a wide range of applications.

Max Center/Cutoff Freq Rng: 20 kHz

Allows for precise filtering of signals within the specified frequency range, enhancing the performance of the active filter.

Technology: CMOS

Utilizes low power consumption and offers high noise immunity, making it energy-efficient and reliable for various electronic devices.

Response Type: LOWPASS

Filters out high-frequency noise effectively, ensuring a clean output signal for improved audio or data transmission.

Technical Specifications

Active Filters S3528B-P attributes and parameters. Explore more Active Filters devices from Onsemi

Electrical Characteristics

Supply Voltage Limit:

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage:

5 V

Maximum Negative Supply Voltage:

-5.5 V

Minimum Negative Supply Voltage:

-4.5 V

Nominal Negative Supply Voltage:

-5 V

Performance Parameters

Semiconductor Technology:

CMOS

Response Type:

Filter Technology:

Maximum Frequency - Cutoff or Center:

20 kHz

Minimum Frequency - Cutoff or Center:

10 Hz

Transfer Characteristics:

Elliptical

Poles and Zeros:

7 and 0

Environmental Characteristics

Maximum Operating Temperature:

70 °C (158 °F)

Minimum Operating Temperature:

0 °C (32 °F)

Temperature Grade:

Connectivity

Total Functions:

1

Total Terminals:

18

Terminal Form:

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Physical Characteristics

Length:

0.887 in (22.54 mm)

Width:

0.3 in (7.62 mm)

Seated Height Limit:

0.17 in (4.32 mm)

Package Style:

In-Line

Form Factor:

Rectangular

Package Code:

DIP

Package Body Material:

Plastic/Epoxy

Surface Mounting:

No

JESD-30 Code:

R-PDIP-T18

Additional Features

Qualified:

No

Trade Compliance

S3528B-P Active Filters trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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