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RURG8060-F085

Onsemi

RURG8060-F085 by Onsemi

RURG8060-F085 by Onsemi is a single rectifier diode with a max forward voltage of 1.6V and max output current of 80A. It is designed for ultra-fast soft recovery applications, operates b/w -55 to 175 °C, and has a max reverse recovery time of 0.09 us.

Median Price

$5.682

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 74 parts In-Stock

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Vyrian

USA . 2,905 parts In-Stock

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Digiode

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Flip Electronics

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Chip Stock

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Ampacity Inc.

Singapore . 2,572 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 2,869 parts In-Stock

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$0.050

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$0.223

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$0.203

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$0.183

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$0.223

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Semicontronic

India . 1,062 parts In-Stock

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$1.010

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$0.985

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$0.980

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Continental Prestige Electronics

USA . 6,685 parts In-Stock

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$5.215

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$5.111

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Netroflash

USA . 50 parts In-Stock

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AZTECH Wire

Italy . 1,257 parts In-Stock

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$17.646

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Microchip USA

USA . 213 parts In-Stock

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$19.152

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QUARKTWIN TECHNOLOGY LTD

USA . 28,917 parts In-Stock

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Problanco Electronics

Mexico . 8,378 parts In-Stock

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Argo Parts USA

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Kulean Microsystems

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Corphita

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Supply Digital

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TANS Electronics

Latvia . 1,674 parts In-Stock

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SupplyDigital Components

Austria . 1,396 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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Corohmni

South Africa . 332 parts In-Stock

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UHIMA Technologies

Türkiye . 106 parts In-Stock

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GreenTree Electronics

Israel . 64 parts In-Stock

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Overview

Experience the pinnacle of quality and performance with the RURG8060-F085 diode rectifier by Onsemi. As a leading manufacturer in the industry, Onsemi brings you a product that surpasses expectations. With its ultra-fast soft recovery technology, this diode offers unparalleled efficiency and reliability. Its sleek rectangular design and flange mount package make it easy to install and integrate into various applications. From automotive to industrial sectors, this diode is built to withstand extreme temperatures and deliver exceptional results. Trust in Onsemi's expertise and choose the RURG8060-F085 for all your diode and rectifier needs. Unlock the power of efficiency and excellence today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.09 us

Ultra-fast reverse recovery time allows for efficient switching and reduces power losses in the circuit.

Maximum Reverse Current: 250 uA

Low reverse current minimizes power dissipation and improves the overall efficiency of the diode.

Maximum Operating Temperature: 175 °C

High operating temperature range makes this diode suitable for a wide range of applications, including those that require higher temperatures.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting AC to DC and are commonly used in power supply circuits, making this diode a versatile choice.

Technical Specifications

Diodes & Rectifiers RURG8060-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST SOFT RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.6 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

240 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

80 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

250 uA

Maximum Reverse Recovery Time:

.09 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

RURG8060-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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