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RHRG1560CC-F085

Onsemi

RHRG1560CC-F085 by Onsemi

RHRG1560CC-F085 by Onsemi is a common cathode diode with 2 elements. It has a fast reverse recovery time of 0.055 us and low reverse current of 100 uA. Ideal for hyperfast soft recovery applications, operating b/w -55 to 175 °C, with max output current of 7.5 A.

Median Price

$1.649

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 76,050 parts In-Stock

1+ parts

-

100+ parts

$1.560

1k+ parts

$1.390

10k+ parts

$1.310

76,050

-

$1.560

$1.390

$1.310

Verical

USA . 56,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.738

10k+ parts

$1.637

56,700

-

-

$1.738

$1.637

Distributors (In-Stock)

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$1.722

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-

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150

$1.722

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Vyrian

USA . 6,679 parts In-Stock

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6,679

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Digiode

USA . 2,282 parts In-Stock

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2,282

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,219 parts In-Stock

1+ parts

$1.010

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-

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1,219

$1.010

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Corohmni

South Africa . 472 parts In-Stock

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$1.654

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472

$1.654

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Aranea Global

USA . 600 parts In-Stock

1+ parts

$1.687

100+ parts

-

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$1.620

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600

$1.687

-

$1.620

-

AZTECH Wire

Italy . 139 parts In-Stock

1+ parts

$19.040

100+ parts

-

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139

$19.040

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Component Stockers USA

USA . 354 parts In-Stock

1+ parts

$99.990

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354

$99.990

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Metaverse IC Inc.

Canada . 36,800 parts In-Stock

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36,800

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QUARKTWIN TECHNOLOGY LTD

USA . 17,768 parts In-Stock

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17,768

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Authorized Procurement Solutions

USA . 12,500 parts In-Stock

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12,500

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Problanco Electronics

Mexico . 8,229 parts In-Stock

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SupplyDigital Components

Austria . 6,721 parts In-Stock

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6,721

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Microchip USA

USA . 5,010 parts In-Stock

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Supply Digital

USA . 2,846 parts In-Stock

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2,846

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Corphita

USA . 2,171 parts In-Stock

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TANS Electronics

Latvia . 633 parts In-Stock

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633

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UHIMA Technologies

Türkiye . 193 parts In-Stock

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193

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Kulean Microsystems

USA . 75 parts In-Stock

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75

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Overview

Unlock a world of possibilities with the RHRG1560CC-F085 by Onsemi. Crafted with precision and expertise, this diode & rectifier offers unparalleled quality and reliability. Designed for hyperfast soft recovery applications, this product boasts a common cathode configuration with two elements, providing maximum efficiency and performance. Ideal for a wide range of industries, from automotive to industrial electronics, this diode promises exceptional value and benefits to customers. Trust in Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and reliable housing for the diode, ensuring longevity and stability in various environments.

Maximum Reverse Recovery Time: 0.055 us

Swift reverse recovery time allows for efficient switching and high-speed operation, making it ideal for applications requiring quick response times.

Maximum Reverse Current: 100 uA

Low reverse current minimizes power loss and enhances efficiency, making it a cost-effective choice for energy-efficient systems.

Maximum Forward Voltage (VF): 2.3 V

Low forward voltage drop reduces power dissipation and improves energy efficiency, making it a suitable option for power-saving applications.

Maximum Output Current: 7.5 A

High output current capability allows for handling substantial electrical loads, making it suitable for power applications that require high current handling capacity.

Technology: AVALANCHE

Avalanche technology ensures robust and reliable operation under high-voltage conditions, making it suitable for high-power applications where overvoltage protection is critical.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 automotive standard ensures high quality and reliability, making it a preferred choice for automotive and harsh environment applications.

Technical Specifications

Diodes & Rectifiers RHRG1560CC-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HYPERFAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.3 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

45 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

7.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.055 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

RHRG1560CC-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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