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RHRG30120

Onsemi

RHRG30120 by Onsemi

RHRG30120 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.085 us and a max output current of 30 A. It operates in hyperfast soft recovery applications, with a max repetitive peak reverse voltage of 1200 V and technology based on avalanche principles.

Median Price

$1.425

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Adafruit Industries

USA . 100 parts In-Stock

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$1.550

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$1.550

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$1.550

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$1.550

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$1.550

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Rochester

USA . 10,566 parts In-Stock

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$1.270

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$1.140

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$1.070

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$1.270

$1.140

$1.070

Verical

USA . 10,566 parts In-Stock

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$1.425

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$1.337

10,566

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$1.337

Distributors (In-Stock)

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Digiode

USA . 868 parts In-Stock

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$1.472

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Nova Conductors

Japan . 92 parts In-Stock

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$1.520

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Component Electronics Inc.

Canada . 49 parts In-Stock

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$2.310

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$1.730

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$1.500

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49

$2.310

$1.730

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Maritex

Poland . 375 parts In-Stock

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$3.006

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$1.761

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$1.460

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375

$3.006

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$1.460

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Flip Electronics

USA . 5,820 parts In-Stock

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Cyclops Electronics Ltd

UK . 5,806 parts In-Stock

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Vyrian

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Micros

Poland . 80 parts In-Stock

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$2.033

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M&R Communications

USA . 70 parts In-Stock

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Partservice

France . 70 parts In-Stock

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$1.926

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$1.906

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$1.906

70

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$1.926

$1.906

$1.906

ComSIT Distribution GmbH

Germany . 29 parts In-Stock

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J2 Sourcing AB

Sweden . 10 parts In-Stock

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Holdelec - ElecDif-Pro

France . 10 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

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Rebound Electronics

UK . 5 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 20,252 parts In-Stock

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$0.050

100+ parts

$0.050

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$0.050

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20,252

$0.050

$0.050

$0.050

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Aztec Data Supply Inc.

USA . 960 parts In-Stock

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$0.148

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960

$0.148

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Corphita

USA . 1,322 parts In-Stock

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$1.395

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1,322

$1.395

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Corohmni

South Africa . 262 parts In-Stock

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$1.489

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Continental Prestige Electronics

USA . 2,118 parts In-Stock

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$1.520

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$1.489

2,118

$1.520

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$1.489

Argo Parts USA

USA . 1,836 parts In-Stock

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$1.520

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1,836

$1.520

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Netroflash

USA . 500 parts In-Stock

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$1.520

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$1.489

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500

$1.520

$1.489

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.550

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$1.550

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$1.550

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$1.550

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Perfect Parts

USA . 214,909 parts In-Stock

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Metaverse IC Inc.

Canada . 80,000 parts In-Stock

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Kepictronics

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RC Electronics

USA . 37,520 parts In-Stock

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$1.650

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GreenTree Electronics

Israel . 31,039 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,968 parts In-Stock

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Lixinc

USA . 14,876 parts In-Stock

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iodParts Technologies Inc.

India . 5,485 parts In-Stock

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SupplyDigital Components

Austria . 3,744 parts In-Stock

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Kulean Microsystems

USA . 2,798 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,769 parts In-Stock

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Supply Digital

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Infinite Electronics LLP (Excess)

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S.R.D Solutions

India . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 465 parts In-Stock

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Problanco Electronics

Mexico . 456 parts In-Stock

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TANS Electronics

Latvia . 428 parts In-Stock

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Authorized Procurement Solutions

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Overview

Unlock the power of advanced technology with the RHRG30120 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their diodes & rectifiers. This hyperfast soft recovery diode offers unparalleled performance with a maximum output current of 30A and a maximum repetitive peak reverse voltage of 1200V, making it ideal for a wide range of applications. Experience enhanced efficiency and superior functionality with the RHRG30120, providing unmatched value and benefits to customers looking for high-quality electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a variety of applications.

Config: SINGLE

Simplifies installation and usage of the diode in circuits, ideal for straightforward designs.

Maximum Reverse Recovery Time: 0.085 us

Offers fast reverse recovery time, enhancing efficiency and performance of the diode.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement of the diode within electronic devices.

No. of Terminals: 2

Allows for simple connection and integration of the diode into a circuit.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and stability in high-vibration environments.

Application: HYPERFAST SOFT RECOVERY

Provides quick and efficient recovery, benefiting high-speed circuits and power applications.

Maximum Operating Temperature: 175 °C

Offers a wide operating temperature range, suitable for various environmental conditions.

Minimum Operating Temperature: -65 °C

Ensures functionality and reliability in low-temperature environments.

Terminal Finish: Matte Tin (Sn) - annealed

Enhances solderability and conductivity for secure connections.

Terminal Position: SINGLE

Simplifies the installation process and reduces circuit complexity.

Case Connection: CATHODE

Provides clear polarity identification for proper circuit integration.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 2.6 V

Offers low forward voltage drop, minimizing power loss and improving efficiency.

Maximum Output Current: 30 A

Supports high output currents, suitable for power applications.

Technology: AVALANCHE

Utilizes avalanche breakdown for efficient switching performance.

Terminal Form: THROUGH-HOLE

Allows for easy insertion and soldering onto circuit boards.

Maximum Repetitive Peak Reverse Voltage: 1200 V

Provides high reverse voltage capability for robust protection in circuits.

Maximum Non-Repetitive Peak Forward Current: 300 A

Handles high forward currents during transient conditions, ensuring reliability.

Diode Element Material: SILICON

Utilizes silicon for the diode element, offering durability and high temperature resistance.

Technical Specifications

Diodes & Rectifiers RHRG30120 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREEWHEELING DIODE

Application:

HYPERFAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.6 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Recovery Time:

.085 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

RHRG30120 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-587-7244, 5961015877244

NIIN

015877244

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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