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RB751S40

Onsemi

RB751S40 by Onsemi

RB751S40 by Onsemi is a Schottky rectifier diode with max forward voltage of 0.37V and output current of 0.03A. It operates b/w -55 to 125°C, ideal for applications requiring high-speed switching in small outline packages.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

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Farnell

UK . 2,746,114 parts In-Stock

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Rochester

USA . 2,703,070 parts In-Stock

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$0.042

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$0.035

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Verical

USA . 2,702,535 parts In-Stock

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Digiode

USA . 4,444 parts In-Stock

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Nova Conductors

Japan . 368 parts In-Stock

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Maritex

Poland . 7,989 parts In-Stock

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$0.024

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Bristol Electronics

USA . 4,960 parts In-Stock

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4,960

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Forefront Electronics and Design

USA . 1 parts In-Stock

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Chip Stock

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Component Sense

UK . 97,868 parts In-Stock

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Legend Electronics Inc.

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Q Components

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Prism Electronics

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SPM Sales

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Cyclops Electronics Ltd

UK . 8,762 parts In-Stock

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North Shore Components

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Microfarads

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Classic Components Corporation

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Sensible Micro Corp

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Vyrian

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DF Sales Co.

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DF Sales Co.

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Connector Distribution Corp

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Right Parts Inc.

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Anansix

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Contempo Components LLC

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NAC Semi

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ECAB

Sweden . 50 parts In-Stock

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Ampacity Inc.

Singapore . 2,742,778 parts In-Stock

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Semicontronic

India . 2,740,213 parts In-Stock

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Corphita

USA . 7,087 parts In-Stock

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Aztec Data Supply Inc.

USA . 13,263 parts In-Stock

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Corohmni

South Africa . 155 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Continental Prestige Electronics

USA . 2,750,268 parts In-Stock

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Argo Parts USA

USA . 1,403 parts In-Stock

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AZTECH Wire

Italy . 11,592 parts In-Stock

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Andel Nordic

Denmark . 14 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Perfect Parts

USA . 373,528 parts In-Stock

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CPlus Electronics

USA . 216,000 parts In-Stock

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Metaverse IC Inc.

Canada . 66,540 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

USA . 18,213 parts In-Stock

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Kulean Microsystems

USA . 8,007 parts In-Stock

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Problanco Electronics

Mexico . 7,560 parts In-Stock

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TANS Electronics

Latvia . 4,894 parts In-Stock

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Supply Digital

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UNI Independent Distributors

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Assy Fe

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 1,349 parts In-Stock

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UHIMA Technologies

Türkiye . 394 parts In-Stock

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GreenTree Electronics

Israel . 299 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Overview

Discover the RB751S40 by Onsemi, a top-quality rectifier diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. With its advanced Schottky technology and high efficiency design, the RB751S40 delivers superior performance with a maximum forward voltage of just 0.37V and a maximum output current of 0.03A. Whether you're looking to enhance your electronic projects or upgrade your devices, the RB751S40 is the perfect choice. Experience the benefits of this exceptional diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection against environmental factors, making the product suitable for various applications.

Config: SINGLE

The single configuration simplifies the design and implementation of the diode in circuits, making it easy to use.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor, making it suitable for applications where space is limited.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the diode to function efficiently even in demanding conditions, ensuring reliable performance.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low forward voltage drop, making the diode ideal for high-frequency applications and power supply circuits.

Technical Specifications

Diodes & Rectifiers RB751S40 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.37 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.03 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

RB751S40 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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