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RB751S40,115

NXP Semiconductors

RB751S40,115 by NXP Semiconductors

RB751S40,115 by NXP Semiconductors is a Schottky rectifier diode with a max forward voltage of 0.37V and output current of 0.12A. It operates at a max temperature of 150°C, making it suitable for applications requiring high-speed switching and low power loss in compact electronic devices.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 111,000 parts In-Stock

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$0.026

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$0.026

Rochester

USA . 106,734 parts In-Stock

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$0.034

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$0.028

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$0.025

106,734

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$0.034

$0.028

$0.025

Verical

USA . 106,000 parts In-Stock

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Chip1Stop

Japan . 25,383 parts In-Stock

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$0.032

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$0.029

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$0.023

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$0.032

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$0.023

Farnell

UK . 8,490 parts In-Stock

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$0.050

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$0.033

8,490

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$0.033

TTI

USA . 6,000 parts In-Stock

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$0.027

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Distributors (In-Stock)

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Digiode

USA . 3,944 parts In-Stock

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$0.027

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Nova Conductors

Japan . 10 parts In-Stock

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$0.067

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10

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Maritex

Poland . 6,000 parts In-Stock

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$0.531

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$0.129

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$0.531

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Chip Stock

USA . 108,000 parts In-Stock

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Sensible Micro Corp

USA . 77,526 parts In-Stock

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IBS Electronics

USA . 63,000 parts In-Stock

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NAC Semi

USA . 51,000 parts In-Stock

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Vyrian

USA . 4,967 parts In-Stock

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Semtec, LLC

USA . 2,690 parts In-Stock

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Bristol Electronics

USA . 2,589 parts In-Stock

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Anansix

USA . 1,937 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 75,657 parts In-Stock

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$0.023

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$0.022

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$0.022

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Ampacity Inc.

Singapore . 75,333 parts In-Stock

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Corphita

USA . 2,689 parts In-Stock

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AZTECH Wire

Italy . 13,277 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.065

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$0.059

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$0.053

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70

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Argo Parts USA

USA . 1,225 parts In-Stock

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$0.067

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Netroflash

USA . 500 parts In-Stock

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$0.067

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$0.064

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$0.062

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$0.067

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Corohmni

South Africa . 89 parts In-Stock

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Aztec Data Supply Inc.

USA . 15,745 parts In-Stock

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Continental Prestige Electronics

USA . 6,019 parts In-Stock

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$0.054

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GreenTree Electronics

Israel . 354,000 parts In-Stock

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Eastek

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Perfect Parts

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Robosynatics

Brazil . 10,615 parts In-Stock

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$0.174

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$0.171

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Lucentia Tech

USA . 10,615 parts In-Stock

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$0.174

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kepictronics

USA . 3,405 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,128 parts In-Stock

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UNI Independent Distributors

Spain . 788 parts In-Stock

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Supply Digital

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Overview

Enhance your electronic projects with the RB751S40,115 by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors guarantees top-notch quality and reliability. This Schottky rectifier diode offers superior performance and efficiency, making it ideal for a wide range of applications. From power supplies to battery chargers, this versatile component ensures optimal functionality. Trust NXP Semiconductors to deliver excellence in every product, providing you with the value and benefits you deserve. Experience innovation at its finest with the RB751S40,115.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a variety of applications.

Config: SINGLE

Simplifies installation and usage, making it ideal for single-use applications.

Surface Mount: YES

Allows for easy mounting onto circuit boards, saving space and improving efficiency.

Package Shape: RECTANGULAR

Facilitates easy placement on the circuit board and enables efficient use of space.

Maximum Operating Temperature: 150 °C

Ensures reliable performance even in high-temperature environments.

Diode Type: RECTIFIER DIODE

Efficiently converts alternating current (AC) to direct current (DC) with low voltage drop.

Maximum Forward Voltage (VF): 0.37 V

Provides low forward voltage drop, leading to higher efficiency and reduced power loss.

Maximum Output Current: 0.12 A

Supports a moderate output current, making it suitable for various low-power applications.

Technology: SCHOTTKY

Offers fast switching speed and low forward voltage drop, enhancing overall performance.

Maximum Repetitive Peak Reverse Voltage: 40 V

Provides high reverse voltage capability for reliable operation in reverse bias.

Technical Specifications

Diodes & Rectifiers RB751S40,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.37 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.2 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

RB751S40,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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