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RB521S30T5G

Onsemi

RB521S30T5G by Onsemi

RB521S30T5G by Onsemi is a Schottky rectifier diode with a max reverse current of 30uA and forward voltage of 0.5V. It is designed for fast recovery applications, operating b/w -55 to 125°C. This surface-mount diode has a max repetitive peak reverse voltage of 30V, making it suitable for various electronic circuits.

Median Price

$0.028

Lifecycle Status

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USA . 33 parts In-Stock

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$0.041

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$0.037

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Arrow

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$0.052

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Verical

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Rochester

USA . 7,710 parts In-Stock

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$0.035

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$0.029

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Chip1Stop

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Digiode

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Corohmni

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Corphita

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Ampacity Inc.

Singapore . 143,194 parts In-Stock

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$0.028

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Component Stockers USA

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Aranea Global

USA . 500 parts In-Stock

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$0.036

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$0.034

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Argo Parts USA

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Advanced Electronics

New Zealand . 33 parts In-Stock

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$0.041

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Aztec Data Supply Inc.

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Lucentia Tech

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Overview

Discover the RB521S30T5G by Onsemi, a top-quality Schottky rectifier diode that offers fast recovery and reliable performance. With Onsemi's reputation for excellence in manufacturing, this diode is sure to meet your high standards. Ideal for various applications, this diode provides a maximum output current of 0.2 A and a maximum reverse voltage of 30 V. Trust in the value and benefits that this diode brings to your projects, with efficient power dissipation and precise operation. Elevate your designs with the RB521S30T5G and experience the difference that quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Current: 30 uA

Low reverse current results in lower power dissipation and improved efficiency.

Application: FAST RECOVERY

Fast recovery time makes this diode suitable for applications requiring quick response and switching.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching, making them ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

This diode can handle high reverse voltages, providing protection to connected circuits.

Technical Specifications

Diodes & Rectifiers RB521S30T5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

30 uA

Reverse Test Voltage:

10 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

RB521S30T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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