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QSE773E3R0

Onsemi

QSE773E3R0 by Onsemi

QSE773E3R0 by Onsemi is a single PIN photodiode with peak wavelength of 920nm. It operates b/w -40 to 85°C, has a reverse breakdown voltage of 32V, and response time of 0.00000005s. Ideal for IR applications due to its rectangular shape and through hole mounting feature.

Median Price

$0.541

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 725 parts In-Stock

1+ parts

$1.160

100+ parts

$0.606

1k+ parts

$0.461

10k+ parts

$0.400

725

$1.160

$0.606

$0.461

$0.400

Rochester

USA . 82,480 parts In-Stock

1+ parts

-

100+ parts

$0.475

1k+ parts

$0.394

10k+ parts

$0.351

82,480

-

$0.475

$0.394

$0.351

DigiKey

USA . 82,480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.590

10k+ parts

-

82,480

-

-

$0.590

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Verical

USA . 78,291 parts In-Stock

1+ parts

-

100+ parts

-

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$0.492

10k+ parts

$0.439

78,291

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-

$0.492

$0.439

Flip Electronics (Authorized)

USA . 12,000 parts In-Stock

1+ parts

-

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12,000

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Digiode

USA . 898 parts In-Stock

1+ parts

$0.369

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898

$0.369

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Vyrian

USA . 1,885 parts In-Stock

1+ parts

$0.388

100+ parts

-

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1,885

$0.388

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Flip Electronics

USA . 582,920 parts In-Stock

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582,920

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DigiKey Marketplace

USA . 80,480 parts In-Stock

1+ parts

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80,480

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Cyclops Electronics Ltd

UK . 19,000 parts In-Stock

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19,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 50,686 parts In-Stock

1+ parts

$0.330

100+ parts

-

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50,686

$0.330

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Corphita

USA . 2,872 parts In-Stock

1+ parts

$0.349

100+ parts

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2,872

$0.349

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Corohmni

South Africa . 69 parts In-Stock

1+ parts

$0.388

100+ parts

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69

$0.388

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Metaverse IC Inc.

Canada . 48,000 parts In-Stock

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48,000

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ChipstoGo Electronic ltd

UK . 20,000 parts In-Stock

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Lixinc

USA . 12,217 parts In-Stock

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12,217

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Perfect Parts

USA . 6,010 parts In-Stock

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SupplyDigital Components

Austria . 5,431 parts In-Stock

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5,431

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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5,000

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Supply Digital

USA . 2,819 parts In-Stock

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2,819

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Kulean Microsystems

USA . 2,439 parts In-Stock

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2,439

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Problanco Electronics

Mexico . 2,300 parts In-Stock

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2,300

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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iodParts Technologies Inc.

India . 809 parts In-Stock

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809

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UHIMA Technologies

Türkiye . 570 parts In-Stock

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570

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TANS Electronics

Latvia . 59 parts In-Stock

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59

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Overview

Experience unparalleled quality and reliability with the QSE773E3R0 photodiode from Onsemi. As a trusted manufacturer in the industry, Onsemi delivers cutting-edge optoelectronic solutions that exceed expectations. This PIN photodiode offers superior performance with a peak wavelength of 920nm, making it ideal for applications in infrared sensing and communication systems. With a quick response time and low dark current, this rectangular photodiode ensures precise and accurate measurements. Trust Onsemi to provide you with the value, benefits, and advantages you need for your next project.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies the setup and reduces complexity in wiring, making it easy to use.

Size: 5.26 mm

Compact size allows for easy integration into various devices without taking up much space.

Peak Wavelength (nm): 920

Peak wavelength of 920nm makes this photodiode ideal for applications requiring sensitivity in the near-infrared range.

Optoelectronic Type: PIN PHOTODIODE

PIN photodiode design offers high sensitivity and low noise, making it suitable for high-performance applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability and performance even in challenging environmental conditions.

Minimum Reverse Breakdown Voltage: 32 V

High reverse breakdown voltage provides protection against overvoltage conditions, ensuring the longevity of the photodiode.

Shape: RECTANGULAR

Rectangular shape allows for easy alignment and mounting in devices, improving overall ease of use.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature makes this photodiode suitable for use in a wide range of environments, even in cold conditions.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring a reliable connection in electronic circuits.

Nominal Light Current: 0.03 mA

Nominal light current of 0.03 mA indicates high sensitivity to light, making it suitable for applications requiring accurate detection.

Maximum Dark Current: 30 nA

Low maximum dark current ensures minimal noise in the output signal, improving the overall signal-to-noise ratio.

Infrared (IR) Range: YES

Infrared range capability makes this photodiode versatile for a wide range of applications that require IR detection or analysis.

Maximum Response Time: 0.00000005 s

Ultra-fast response time of 0.00000005 s enables real-time detection and precise timing in applications requiring rapid response.

Maximum Reverse Voltage: 32 V

High maximum reverse voltage rating provides robust protection against reverse bias conditions, ensuring the longevity of the photodiode.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature enables easy and secure installation on PCBs or other surfaces, enhancing the overall reliability of the system.

Technical Specifications

Photodiodes QSE773E3R0 attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

DAYLIGHT FILTER

Configuration:

SINGLE

Maximum Dark Current:

30 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

.03 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

920

Maximum Response Time:

.00000005 s

Minimum Reverse Breakdown Voltage:

32 V

Maximum Reverse Voltage:

32 V

Shape:

RECTANGULAR

Size:

5.26 mm

Sub-Category:

Photo Diodes

Terminal Finish:

TIN

Trade Compliance

QSE773E3R0 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.60.50

SB

8541.40.60.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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