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P6KE110ARLG

Onsemi

P6KE110ARLG by Onsemi

P6KE110ARLG by Onsemi is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 110.5V Breakdown Voltage, ideal for surge protection in electronic circuits. Its UNIDIRECTIONAL polarity and AVALANCHE technology ensure efficient transient suppression. With a max clamping voltage of 152V, it safeguards against voltage spikes in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 71,000 parts In-Stock

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Vyrian

USA . 8,887 parts In-Stock

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Digiode

USA . 1,458 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Distributors (Availability)

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Ampacity Inc.

Singapore . 388 parts In-Stock

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$0.010

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388

$0.010

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AZTECH Wire

Italy . 382 parts In-Stock

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$6.062

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382

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Kulean Microsystems

USA . 6,364 parts In-Stock

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TANS Electronics

Latvia . 4,033 parts In-Stock

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Problanco Electronics

Mexico . 987 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 447 parts In-Stock

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SupplyDigital Components

Austria . 331 parts In-Stock

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Corphita

USA . 321 parts In-Stock

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Corohmni

South Africa . 246 parts In-Stock

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Overview

Enhance your electronic devices with the P6KE110ARLG transient suppression device by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products that guarantee reliability and performance. The P6KE110ARLG provides excellent protection against voltage spikes, ensuring the safety of your equipment. Its versatile applications make it an essential component for various electronic systems. Invest in peace of mind and safeguard your devices with the P6KE110ARLG from Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and protection against environmental factors, making the product more durable and reliable.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capability allows the device to handle transient surges effectively and protect sensitive components in the circuit.

Nominal Breakdown Voltage: 110.5 V

The precise breakdown voltage ensures accurate protection levels and reliable performance in transient suppression applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The diode type specifically designed for transient voltage suppression offers superior protection and fast response time during voltage spikes.

Maximum Clamping Voltage: 152 V

The low clamping voltage ensures that the protected circuit is not exposed to excessive voltage levels, safeguarding sensitive electronics.

Technical Specifications

Transient Suppression Devices P6KE110ARLG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

116 V

Minimum Breakdown Voltage:

105 V

Nominal Breakdown Voltage:

110.5 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

152 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

94 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

P6KE110ARLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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