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NZL7V5AXV3T1

Onsemi

NZL7V5AXV3T1 by Onsemi

NZL7V5AXV3T1 by Onsemi is a Zener diode with 7.5V nominal reference voltage, 7.88V max breakdown voltage, and 15 ohm max dynamic impedance. Commonly used in transient suppression applications due to its unidirectional polarity and small outline package style.

Median Price

$0.300

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 2,745 parts In-Stock

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$0.300

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$0.150

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$0.060

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2,745

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Chip Stock

USA . 36,000 parts In-Stock

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Vyrian

USA . 8,955 parts In-Stock

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Microfarads

USA . 2,594 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 311 parts In-Stock

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$18.950

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Component Stockers USA

USA . 487 parts In-Stock

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$99.990

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Kepictronics

USA . 75,000 parts In-Stock

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Kulean Microsystems

USA . 6,994 parts In-Stock

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SupplyDigital Components

Austria . 6,482 parts In-Stock

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TANS Electronics

Latvia . 6,310 parts In-Stock

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Problanco Electronics

Mexico . 1,196 parts In-Stock

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Corphita

USA . 835 parts In-Stock

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Corohmni

South Africa . 464 parts In-Stock

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UHIMA Technologies

Türkiye . 274 parts In-Stock

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Overview

Discover the NZL7V5AXV3T1 by Onsemi, a top-quality transient suppression device designed for ultimate protection. With a common anode and two elements, this product offers unparalleled security against voltage fluctuations. Whether in industrial, automotive, or consumer electronics applications, this device ensures optimal performance and reliability. Trust Onsemi's expertise in manufacturing to deliver a superior solution that guarantees peace of mind. Upgrade your system with the NZL7V5AXV3T1 and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection against external factors, making it suitable for various applications.

Working Test Current: 5 mA

Having a working test current of 5 mA ensures reliable performance under standard operating conditions.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and simplifying the manufacturing process.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transient suppression device can withstand elevated temperatures without compromising performance.

No. of Elements: 2

Having 2 elements increases the protective capabilities of the device and ensures better transient suppression efficiency.

Nominal Reference Voltage: 7.5 V

The nominal reference voltage of 7.5 V indicates the level at which the device starts to suppress transient voltage spikes, providing effective protection to the connected circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology ensures rapid response to transient voltage spikes, safeguarding the circuit components from damage.

Technical Specifications

Transient Suppression Devices NZL7V5AXV3T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.88 V

Minimum Breakdown Voltage:

7.12 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Dynamic Impedance:

15 ohm

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.24 W

Qualification:

Not Qualified

Nominal Reference Voltage:

7.5 V

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

NZL7V5AXV3T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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