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NZL5V6AUA3

Onsemi

NZL5V6AUA3 by Onsemi

NZL5V6AUA3 by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 5.3V min and 5.9V max breakdown voltage, common anode configuration, and 2 elements in a chip carrier package. It is used for transient suppression in electronic circuits requiring unidirectional polarity protection at peak reflow temperatures up to 260 °C.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 701,975 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

701,975

-

$0.030

$0.025

$0.023

DigiKey

USA . 701,975 parts In-Stock

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701,975

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Verical

USA . 635,975 parts In-Stock

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635,975

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Distributors (In-Stock)

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Digiode

USA . 1,174 parts In-Stock

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$0.024

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1,174

$0.024

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Vyrian

USA . 2,107 parts In-Stock

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$0.025

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$0.025

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Corel Iberica Componentes, S.L.

Spain . 1,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,084 parts In-Stock

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$0.022

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1,084

$0.022

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Corohmni

South Africa . 211 parts In-Stock

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$0.025

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211

$0.025

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Component Stockers USA

USA . 617,161 parts In-Stock

1+ parts

$0.030

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$0.020

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$0.020

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$0.020

617,161

$0.030

$0.020

$0.020

$0.020

Kepictronics

USA . 800,000 parts In-Stock

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Continental Prestige Electronics

USA . 701,975 parts In-Stock

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$0.016

701,975

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$0.016

Problanco Electronics

Mexico . 8,298 parts In-Stock

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TANS Electronics

Latvia . 8,113 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Kulean Microsystems

USA . 652 parts In-Stock

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UHIMA Technologies

Türkiye . 424 parts In-Stock

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424

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SupplyDigital Components

Austria . 382 parts In-Stock

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382

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Overview

Discover the NZL5V6AUA3 by Onsemi, a cutting-edge Transient Suppression Device that offers unparalleled quality and performance. Manufactured by Onsemi, a renowned leader in the industry, this product ensures reliability and durability. Ideal for a wide range of applications, this device provides effective protection against voltage transients. With its common anode configuration and innovative technology, customers can trust in the value and benefits that this product brings. Upgrade your systems with the NZL5V6AUA3 and experience enhanced protection and peace of mind.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides excellent durability and protection, making the transient suppression device suitable for demanding environments.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for effective transient suppression and protection against voltage spikes in the circuit.

Surface Mount: YES

Being surface mountable makes installation of this transient suppression device easy and convenient in modern electronic designs.

Package Shape: RECTANGULAR

The rectangular shape of the package offers efficient use of space in circuit board layouts, especially in compact electronic devices.

Minimum Breakdown Voltage: 5.3 V

With a minimum breakdown voltage of 5.3 V, this transient suppression device can effectively clamp voltage surges above this level, protecting connected components.

Maximum Breakdown Voltage: 5.9 V

Having a maximum breakdown voltage of 5.9 V ensures that the device can handle higher voltage levels without damage, providing reliable overvoltage protection.

Technology: ZENER

Utilizing Zener technology, this transient suppression device offers efficient voltage regulation and reliable protection against transient events in the circuit.

Diode Element Material: SILICON

The silicon diode element material provides high performance and low leakage current, ensuring effective suppression of voltage transients with minimal power dissipation.

Technical Specifications

Transient Suppression Devices NZL5V6AUA3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

5.9 V

Minimum Breakdown Voltage:

5.3 V

Case Connection:

ANODE

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-CBCC-N3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Trade Compliance

NZL5V6AUA3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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