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NZL5V6ATT1

Onsemi

NZL5V6ATT1 by Onsemi

NZL5V6ATT1 by Onsemi is a Zener diode with 5.6V nominal reference voltage and 5.3-5.9V breakdown voltage, ideal for transient suppression applications. It features common anode configuration, dual terminals, and small outline package shape suitable for surface mount assembly. With a max power dissipation of 0.15W and operating temperature up to 150 °C, it offers reliable protection against voltage spikes in electronic circuits.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,930 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

2,930

-

$0.066

$0.055

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,130 parts In-Stock

1+ parts

$0.051

100+ parts

-

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2,130

$0.051

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Chip Stock

USA . 36,000 parts In-Stock

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36,000

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Vyrian

USA . 7,687 parts In-Stock

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7,687

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,455 parts In-Stock

1+ parts

$0.049

100+ parts

-

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1,455

$0.049

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Corohmni

South Africa . 270 parts In-Stock

1+ parts

$0.054

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270

$0.054

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AZTECH Wire

Italy . 149 parts In-Stock

1+ parts

$19.690

100+ parts

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149

$19.690

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

1+ parts

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30,000

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TANS Electronics

Latvia . 7,959 parts In-Stock

1+ parts

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7,959

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Problanco Electronics

Mexico . 6,304 parts In-Stock

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6,304

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Kulean Microsystems

USA . 5,760 parts In-Stock

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5,760

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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SupplyDigital Components

Austria . 2,228 parts In-Stock

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2,228

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Perfect Parts

USA . 896 parts In-Stock

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896

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UHIMA Technologies

Türkiye . 479 parts In-Stock

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479

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Overview

Looking for reliable protection against transient voltage spikes? Look no further than the NZL5V6ATT1 by Onsemi. With its high-quality construction and advanced technology, this transient suppression device offers unmatched performance and durability. Ideal for a wide range of applications, this product provides peace of mind knowing your electronics are safeguarded. Say goodbye to downtime and costly repairs with the NZL5V6ATT1 - your ultimate solution for protecting your valuable equipment. Trust in Onsemi's reputation for excellence and invest in the best for your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Working Test Current: 1 mA

The low working test current helps in minimizing power consumption and reducing the risk of overheating during operation.

Surface Mount: YES

Being surface mountable makes it easy to integrate this device onto PCBs, saving space and simplifying the assembly process.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand harsh environmental conditions and ensure reliable performance.

Mininum Breakdown Voltage: 5.3 V

The low minimum breakdown voltage helps in protecting sensitive electronic components from voltage spikes and surges.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor Diode type ensures efficient suppression of transient voltage spikes, safeguarding the connected circuits from damage.

Technical Specifications

Transient Suppression Devices NZL5V6ATT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

5.9 V

Minimum Breakdown Voltage:

5.3 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.3 %

Working Test Current:

1 mA

Trade Compliance

NZL5V6ATT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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