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NZ23C5V6ALT1G

Onsemi

NZ23C5V6ALT1G by Onsemi

NZ23C5V6ALT1G by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 5.6V breakdown voltage and 24W peak reverse power dissipation. It features a common anode configuration, dual terminal position, and small outline package style. Ideal for transient suppression in electronic circuits requiring unidirectional polarity protection.

Median Price

$0.068

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,528,500 parts In-Stock

1+ parts

-

100+ parts

$0.068

1k+ parts

$0.056

10k+ parts

$0.050

2,528,500

-

$0.068

$0.056

$0.050

DigiKey

USA . 2,528,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.080

2,528,500

-

-

-

$0.080

Verical

USA . 1,785,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.063

1,785,000

-

-

-

$0.063

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 318 parts In-Stock

1+ parts

$0.024

100+ parts

-

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318

$0.024

-

-

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Bristol Electronics

USA . 640 parts In-Stock

1+ parts

$0.113

100+ parts

$0.056

1k+ parts

$0.039

10k+ parts

-

640

$0.113

$0.056

$0.039

-

Chip Stock

USA . 28,000 parts In-Stock

1+ parts

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28,000

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Vyrian

USA . 9,459 parts In-Stock

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9,459

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Microfarads

USA . 605 parts In-Stock

1+ parts

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605

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,317 parts In-Stock

1+ parts

$0.022

100+ parts

-

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2,317

$0.022

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Corohmni

South Africa . 456 parts In-Stock

1+ parts

$0.025

100+ parts

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456

$0.025

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AZTECH Wire

Italy . 801 parts In-Stock

1+ parts

$14.550

100+ parts

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801

$14.550

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Continental Prestige Electronics

USA . 2,528,500 parts In-Stock

1+ parts

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$0.023

2,528,500

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$0.023

Kepictronics

USA . 39,000 parts In-Stock

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39,000

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Perfect Parts

USA . 9,948 parts In-Stock

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9,948

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TANS Electronics

Latvia . 6,889 parts In-Stock

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6,889

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Kulean Microsystems

USA . 6,631 parts In-Stock

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6,631

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SupplyDigital Components

Austria . 5,291 parts In-Stock

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5,291

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Problanco Electronics

Mexico . 3,433 parts In-Stock

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3,433

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UHIMA Technologies

Türkiye . 627 parts In-Stock

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627

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Overview

Discover the power of protection with the NZ23C5V6ALT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Transient Suppression Devices that offer unparalleled reliability and performance. Ideal for a wide range of applications, this product provides ultimate defense against voltage spikes, ensuring the safety and longevity of your electronic devices. With its common anode configuration and Zener technology, the NZ23C5V6ALT1G guarantees maximum protection with minimal power consumption. Trust Onsemi to safeguard your valuable equipment and invest in peace of mind today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the device, ensuring reliable performance.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for efficient transient suppression and protection against voltage spikes.

Surface Mount: YES

Being surface mountable makes it easier to integrate this device onto circuit boards, saving space and simplifying assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 24 W

With a high maximum power dissipation, this device can handle sudden surges in power without damage, providing reliable protection for connected circuits.

Nominal Breakdown Voltage: 5.6 V

The nominal breakdown voltage of 5.6 V indicates the voltage level at which the device starts conducting, effectively clamping the voltage to protect downstream components.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and soldering onto circuit boards, facilitating assembly and integration.

No. of Terminals: 3

Having 3 terminals enables secure electrical connections, ensuring stable performance and effective transient suppression capabilities.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making it ideal for applications where size constraints are a concern.

Terminal Finish: Tin (Sn)

The tin terminal finish provides good conductivity and corrosion resistance, maintaining reliable connections for optimal performance.

Terminal Position: DUAL

The dual terminal position allows for flexible placement and soldering options, accommodating different circuit layouts and assembly requirements.

Maximum Power Dissipation: 0.3 W

With a low maximum power dissipation, the device operates efficiently and effectively suppresses transient voltage spikes without overheating.

Minimum Breakdown Voltage: 5.2 V

The minimum breakdown voltage of 5.2 V ensures that the device activates at a consistent voltage level, providing reliable protection against transient voltage events.

Maximum Breakdown Voltage: 6 V

The maximum breakdown voltage of 6 V indicates the highest voltage level at which the device can effectively clamp and suppress transient voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type specifically designed for transient voltage suppression applications, ensuring reliable and efficient protection against voltage surges.

Technology: ZENER

The Zener technology used in this device allows for precise voltage regulation and reliable transient suppression performance, making it a dependable choice for surge protection.

Terminal Form: GULL WING

The gull wing terminal form provides secure soldering points and easy placement on circuit boards, enhancing the reliability and longevity of the device.

No. of Elements: 2

Having 2 elements increases the efficiency and effectiveness of transient suppression, providing enhanced protection for connected circuits.

Maximum Repetitive Peak Reverse Voltage: 1 V

The maximum repetitive peak reverse voltage of 1 V ensures that the device can handle repeated voltage spikes without compromising its performance or reliability.

Polarity: UNIDIRECTIONAL

The unidirectional polarity allows the device to effectively clamp and suppress voltage spikes in one direction, ensuring optimal protection for sensitive components.

Maximum Clamping Voltage: 8 V

The maximum clamping voltage of 8 V indicates the highest voltage level that the device will limit or clamp during a transient event, providing reliable overvoltage protection.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high efficiency and performance for transient suppression, making this device a reliable choice for surge protection applications.

Technical Specifications

Transient Suppression Devices NZ23C5V6ALT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

6 V

Minimum Breakdown Voltage:

5.2 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

8 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

24 W

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NZ23C5V6ALT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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