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NTD23N03R-001

Onsemi

NTD23N03R-001 by Onsemi

NTD23N03R-001 by Onsemi is an N-Channel MOSFET with Vdss of 25V and Id of 3.8A (Ta), 17.1A (Tc). Featuring Rds On of 45mOhm @ 6A, it has a Gate Charge of 3.76nC @ 4.5V. Ideal for applications requiring high power dissipation up to 22.3W in temperatures ranging from -55 °C to 150°C, such as in discrete semiconductor products and transistors.

Median Price

$0.127

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 3,372 parts In-Stock

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-

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$0.132

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$0.110

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$0.098

3,372

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$0.098

Verical

USA . 3,372 parts In-Stock

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$0.122

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$0.122

Distributors (In-Stock)

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Digiode

USA . 1,830 parts In-Stock

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$0.103

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$0.103

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Vyrian

USA . 8,305 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,818 parts In-Stock

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$0.097

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$0.097

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Corohmni

South Africa . 385 parts In-Stock

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$0.108

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385

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AZTECH Wire

Italy . 148 parts In-Stock

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$16.480

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148

$16.480

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,286 parts In-Stock

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Kulean Microsystems

USA . 6,475 parts In-Stock

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SupplyDigital Components

Austria . 5,297 parts In-Stock

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Continental Prestige Electronics

USA . 3,372 parts In-Stock

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$0.099

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Problanco Electronics

Mexico . 2,837 parts In-Stock

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TANS Electronics

Latvia . 1,248 parts In-Stock

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UHIMA Technologies

Türkiye . 21 parts In-Stock

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Overview

Unleash the power of innovation with the NTD23N03R-001 by Onsemi. This top-of-the-line product in the Additional Parts category offers unparalleled quality and reliability, backed by the trusted name of Onsemi. Ideal for a wide range of applications, this MOSFET transistor delivers exceptional performance and efficiency. Elevate your projects with the NTD23N03R-001 and experience the value and benefits it brings to your work. Don't settle for anything less than excellence - choose Onsemi for all your semiconductor needs.

Feature Benefit Bullets

Drain to Source Voltage (Vdss) 25 V

Higher drain to source voltage allows for greater flexibility and reliability in various applications.

Current - Continuous Drain (Id) @ 25 °C 3.8A (Ta), 17.1A (Tc)

Capable of handling high continuous drain currents, making it suitable for power electronics applications.

Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V

Low on-state resistance (Rds On) results in reduced power losses and improved efficiency.

Gate Charge (Qg) (Max) @ Vgs 3.76 nC @ 4.5 V

Low gate charge allows for fast switching speeds, which is important in applications requiring rapid response.

Operating Temperature -55 °C ~ 150°C (TJ)

Wide operating temperature range ensures stable performance in extreme conditions.

Technical Specifications

Additional Parts NTD23N03R-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

=NTD23N03R=001
ONSONSNTD23N03R-001
2156-NTD23N03R-001
=NTD23N03R
NTD23N03R-001OS

Operating Temperature:

-55°C ~ 150°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

225 pF @ 20 V

Gate Charge (Qg) (Max) @ Vgs:

3.76 nC @ 4.5 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

45mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Supplier Device Package:

IPAK

Standard Package:

75

Drain to Source Voltage (Vdss):

25 V

Power Dissipation (Max):

1.14W (Ta), 22.3W (Tc)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Technology:

MOSFET (Metal Oxide)

Packaging:

Tube

Current - Continuous Drain (Id) @ 25°C:

3.8A (Ta), 17.1A (Tc)

Vgs (Max):

±20V

Drive Voltage (Max Rds On, Min Rds On):

4V, 5V

Base Product Number:

NTD23

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD23N03R-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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