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NRVBS360BT3GVF01

Onsemi

NRVBS360BT3GVF01 by Onsemi

NRVBS360BT3GVF01 by Onsemi is a Schottky rectifier diode with a max output current of 3A and reverse test voltage of 60V. Ideal for applications requiring high efficiency, it operates b/w -65 to 175°C and is suitable for surface mount designs in automotive electronics.

Median Price

$0.384

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 752 parts In-Stock

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-

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$0.384

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$0.319

10k+ parts

$0.284

752

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$0.384

$0.319

$0.284

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Nova Conductors

Japan . 97 parts In-Stock

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$1.000

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$1.000

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Vyrian

USA . 6,786 parts In-Stock

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Flip Electronics

USA . 2,500 parts In-Stock

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Digiode

USA . 2,345 parts In-Stock

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Semicontronic

India . 858 parts In-Stock

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$0.010

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$0.010

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$0.010

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858

$0.010

$0.010

$0.010

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Corohmni

South Africa . 353 parts In-Stock

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$0.980

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353

$0.980

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Netroflash

USA . 50 parts In-Stock

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$1.000

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$1.000

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Ampacity Inc.

Singapore . 771 parts In-Stock

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$3.010

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771

$3.010

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AZTECH Wire

Italy . 597 parts In-Stock

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$8.813

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Kulean Microsystems

USA . 7,547 parts In-Stock

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TANS Electronics

Latvia . 7,179 parts In-Stock

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SupplyDigital Components

Austria . 6,916 parts In-Stock

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Problanco Electronics

Mexico . 5,557 parts In-Stock

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Continental Prestige Electronics

USA . 4,379 parts In-Stock

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Argo Parts USA

USA . 1,407 parts In-Stock

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Corphita

USA . 1,128 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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UHIMA Technologies

Türkiye . 366 parts In-Stock

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Overview

Experience superior quality and performance with the NRVBS360BT3GVF01 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch diodes and rectifiers designed for various applications. With a maximum reverse current of 30uA and a peak reflow temperature of 260°C, this product ensures reliability and durability. Whether you're working on automotive electronics or industrial equipment, this Schottky diode offers a high forward voltage of just 0.63V and a maximum output current of 3A, making it an excellent choice for your project needs. Elevate your designs with the NRVBS360BT3GVF01 and enjoy the value and benefits it brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diode, making it long-lasting and reliable.

Maximum Reverse Current: 30 uA

With a low maximum reverse current, this diode is efficient and consumes less power, making it suitable for various low power applications.

Maximum Forward Voltage (VF): 0.63 V

The low maximum forward voltage drop of 0.63 V ensures minimal power loss and efficient performance of the diode in conducting current.

Maximum Output Current: 3 A

With a maximum output current of 3 A, this diode can handle higher current loads, making it suitable for applications requiring higher power levels.

Technology: SCHOTTKY

The Schottky technology used in this diode provides fast switching speed and low forward voltage drop, making it ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers NRVBS360BT3GVF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.63 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

125 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

30 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBS360BT3GVF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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