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NRVBS3201T3G

Onsemi

NRVBS3201T3G by Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

$0.461

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

$0.461

1k+ parts

$0.383

10k+ parts

$0.341

60,000

-

$0.461

$0.383

$0.341

Verical

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.478

10k+ parts

$0.426

60,000

-

-

$0.478

$0.426

DigiKey

USA . 55,000 parts In-Stock

1+ parts

-

100+ parts

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$0.430

55,000

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$0.430

Distributors (In-Stock)

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Flip Electronics

USA . 55,000 parts In-Stock

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Bristol Electronics

USA . 42,378 parts In-Stock

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Vyrian

USA . 6,260 parts In-Stock

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Chip Stock

USA . 4,800 parts In-Stock

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4,800

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Digiode

USA . 2,411 parts In-Stock

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2,411

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Distributors (Availability)

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.055

100+ parts

$0.050

1k+ parts

$0.045

10k+ parts

-

150

$0.055

$0.050

$0.045

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AZTECH Wire

Italy . 139 parts In-Stock

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$20.620

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$20.620

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Perfect Parts

USA . 19,694 parts In-Stock

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iodParts Technologies Inc.

India . 6,176 parts In-Stock

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Kulean Microsystems

USA . 5,809 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 2,737 parts In-Stock

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UHIMA Technologies

Türkiye . 763 parts In-Stock

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Corphita

USA . 287 parts In-Stock

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287

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Problanco Electronics

Mexico . 157 parts In-Stock

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157

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TANS Electronics

Latvia . 121 parts In-Stock

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Corohmni

South Africa . 75 parts In-Stock

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75

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Technical Specifications

Diodes & Rectifiers NRVBS3201T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST SOFT RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

1000 uA

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBS3201T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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