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NRVBS260T3G

Onsemi

NRVBS260T3G by Onsemi

NRVBS260T3G by Onsemi is a Schottky rectifier diode with a max reverse voltage of 60V and forward voltage of 0.63V, ideal for power applications. It has a max output current of 2A and low reverse current of 200uA, operating b/w -55°C to 125°C. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.671

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 1,280 parts In-Stock

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$0.671

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$0.704

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$0.664

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ComSIT Distribution GmbH

Germany . 26,902 parts In-Stock

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Vyrian

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Bristol Electronics

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Atlantic Semiconductor

USA . 2,260 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,078 parts In-Stock

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Nova Conductors

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Sensible Micro Corp

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Prism Electronics

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 738 parts In-Stock

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$0.176

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Corohmni

South Africa . 291 parts In-Stock

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Ampacity Inc.

Singapore . 1,337 parts In-Stock

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$2.010

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Semicontronic

India . 447 parts In-Stock

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$2.010

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$1.960

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$1.950

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447

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AZTECH Wire

Italy . 268 parts In-Stock

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$14.925

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Perfect Parts

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Lixinc

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iodParts Technologies Inc.

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Problanco Electronics

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Continental Prestige Electronics

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Kulean Microsystems

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SupplyDigital Components

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Cyclops Electronics Ltd (Excess)

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Aranea Global

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UHIMA Technologies

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Overview

Unlock the power of innovation with the NRVBS260T3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their diodes & rectifiers. Ideal for power applications, this Schottky rectifier diode offers a maximum output current of 2A and a reverse test voltage of 60V. With a compact design and dual terminal position, this product provides superior performance in a wide range of temperatures. Trust Onsemi to provide you with cutting-edge technology that meets the highest standards, ensuring your projects run smoothly and efficiently.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and quick installation on circuit boards, saving time and labor costs.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient operation and minimal power loss.

Application: POWER

Designed for power applications, making it suitable for a wide range of electronic devices.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures without compromising performance, suitable for various operating environments.

Peak Reflow Temperature °C: 260

Can endure high reflow temperatures during manufacturing processes without damage.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring efficient conversion of AC to DC.

Maximum Output Current: 2 A

Capable of handling high output currents, making it suitable for power-intensive applications.

Technology: SCHOTTKY

Schottky technology allows for faster switching speeds and lower forward voltage, maximizing efficiency.

Maximum Repetitive Peak Reverse Voltage: 60 V

Can handle high reverse voltages, providing reliability and protection in various circuits.

Technical Specifications

Diodes & Rectifiers NRVBS260T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.63 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBS260T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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