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NRVBS240LT3G

Onsemi

NRVBS240LT3G by Onsemi

NRVBS240LT3G by Onsemi is a Schottky rectifier diode with a max reverse current of 2000 uA and a reverse test voltage of 40 V. It is designed for power applications, featuring a max output current of 2 A and operating temperatures ranging from -55 to 150 °C. The diode comes in a small outline package with matte tin terminal finish, making it suitable for surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Semtec, LLC

USA . 26,325 parts In-Stock

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Vyrian

USA . 7,113 parts In-Stock

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Digiode

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Speed Components Ltd

Israel . 160 parts In-Stock

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iBuyXS LLC

. 33,506 parts In-Stock

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$0.390

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AZTECH Wire

Italy . 510 parts In-Stock

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510

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Kepictronics

USA . 72,540 parts In-Stock

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RC Electronics

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Perfect Parts

USA . 8,926 parts In-Stock

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SupplyDigital Components

Austria . 6,232 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 4,352 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 2,278 parts In-Stock

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Corphita

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Corohmni

South Africa . 371 parts In-Stock

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UHIMA Technologies

Türkiye . 2 parts In-Stock

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Overview

Enhance your power applications with the NRVBS240LT3G by Onsemi. Crafted with precision and quality, Onsemi brings you a reliable diode that offers unmatched performance and efficiency. Perfect for various power applications, this Schottky rectifier diode ensures seamless operation while providing a maximum output current of 2A and a maximum reverse test voltage of 40V. Trust in Onsemi's expertise and elevate your projects with the NRVBS240LT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes this diode lightweight and durable, ideal for various applications that require a reliable and long-lasting component.

Maximum Reverse Current: 2000 uA

With a high maximum reverse current rating, this diode can handle more current in reverse bias without getting damaged, ensuring stable performance under different operational conditions.

Application: POWER

Designed specifically for power applications, this diode is suitable for use in power supplies, converters, and other circuits where efficient power handling is crucial.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers low forward voltage drop and fast switching characteristics, making it efficient and suitable for high-frequency applications.

Technical Specifications

Diodes & Rectifiers NRVBS240LT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.54 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

2000 uA

Reverse Test Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBS240LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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