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NRVBS2040LT3G

Onsemi

NRVBS2040LT3G by Onsemi

NRVBS2040LT3G by Onsemi is a Schottky rectifier diode with a max reverse voltage of 40V and forward voltage of 0.5V, ideal for power applications. It has a max output current of 2A and operates b/w -55 °C to 125°C, making it suitable for various power-related projects. The diode is designed in a small outline package with matte tin finish and dual terminals for surface mount assembly.

Median Price

$0.400

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 15,000 parts In-Stock

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$0.400

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Chip Stock

USA . 45,000 parts In-Stock

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Flip Electronics

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Vyrian

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Digiode

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LWI Electronics Inc

India . 48 parts In-Stock

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AZTECH Wire

Italy . 654 parts In-Stock

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Perfect Parts

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Kepictronics

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Problanco Electronics

Mexico . 5,133 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 956 parts In-Stock

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SupplyDigital Components

Austria . 900 parts In-Stock

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Corphita

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Corohmni

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GreenTree Electronics

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Overview

Enhance your power applications with the NRVBS2040LT3G by Onsemi, a premium quality Schottky rectifier diode designed for maximum efficiency and reliability. Manufactured by industry leader Onsemi, this diode offers customers unparalleled performance and durability, making it the ideal choice for a wide range of power applications. Say goodbye to worries about reverse current and temperature limits - with the NRVBS2040LT3G, you can trust in its superior design and construction to deliver consistent results every time. Upgrade your power systems today with the NRVBS2040LT3G from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan for the product.

Config: SINGLE

SINGLE configuration simplifies the circuit design and makes the product easier to integrate into various systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Maximum Reverse Current: 800 uA

Low reverse current ensures minimal power loss and improved efficiency in the application.

Package Shape: RECTANGULAR

Rectangular shape enables space-saving design and ease of placement in compact electronic devices.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability and stability in various operating conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for robust connections.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching capabilities for efficient performance.

Technical Specifications

Diodes & Rectifiers NRVBS2040LT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

70 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

800 uA

Reverse Test Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBS2040LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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