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NRVBM140T3G

Onsemi

NRVBM140T3G by Onsemi

NRVBM140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.3V and output current of 1A. It operates b/w -55°C to 125°C, making it suitable for automotive applications due to AEC-Q101 compliance and a max reverse voltage of 40V. The package style is small outline with gull wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 201,500 parts In-Stock

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Vyrian

USA . 2,460 parts In-Stock

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Digiode

USA . 989 parts In-Stock

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Nova Conductors

Japan . 94 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,539 parts In-Stock

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$0.190

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2,539

$0.190

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.229

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$0.208

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$0.188

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200

$0.229

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$0.188

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Ampacity Inc.

Singapore . 608 parts In-Stock

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$1.010

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608

$1.010

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Semicontronic

India . 1,541 parts In-Stock

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$3.010

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$2.935

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$2.920

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1,541

$3.010

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AZTECH Wire

Italy . 188 parts In-Stock

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$9.921

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iodParts Technologies Inc.

India . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 4,445 parts In-Stock

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Kulean Microsystems

USA . 3,585 parts In-Stock

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Continental Prestige Electronics

USA . 2,417 parts In-Stock

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Corphita

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Argo Parts USA

USA . 1,817 parts In-Stock

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TANS Electronics

Latvia . 1,687 parts In-Stock

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UHIMA Technologies

Türkiye . 558 parts In-Stock

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Bastille Electronics

Australia . 550 parts In-Stock

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550

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Corohmni

South Africa . 65 parts In-Stock

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Problanco Electronics

Mexico . 38 parts In-Stock

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Overview

Discover the NRVBM140T3G by Onsemi, a high-quality Schottky rectifier diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this diode is perfect for a variety of applications. From automotive to industrial electronics, this diode provides exceptional value with its low forward voltage and high output current capabilities. Say goodbye to worries about overheating or breakdowns with this durable and efficient diode. Upgrade your projects today with the NRVBM140T3G and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the diode and rectifier, making it suitable for a variety of applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this diode and rectifier can withstand elevated temperatures, ensuring optimal performance in harsh environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC) with high efficiency and low forward voltage drop.

Technology: SCHOTTKY

The Schottky technology used in this diode allows for faster switching speeds, lower forward voltage drop, and higher efficiency, making it a reliable choice for various applications.

Maximum Repetitive Peak Reverse Voltage: 40 V

The high maximum repetitive peak reverse voltage of 40 V ensures the diode can handle reverse voltage spikes and transients without breakdown, improving the overall reliability of the circuit.

Technical Specifications

Diodes & Rectifiers NRVBM140T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.3 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBM140T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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