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NRVBM120LT3G

Onsemi

NRVBM120LT3G by Onsemi

NRVBM120LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.26V and output current of 1A. It operates b/w -55 °C to 125°C, making it suitable for automotive applications due to AEC-Q101 compliance and a max repetitive peak reverse voltage of 20V.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 57,000 parts In-Stock

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Vyrian

USA . 11,483 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 281 parts In-Stock

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TANS Electronics

Latvia . 8,083 parts In-Stock

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Problanco Electronics

Mexico . 7,405 parts In-Stock

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SupplyDigital Components

Austria . 2,284 parts In-Stock

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Corphita

USA . 1,423 parts In-Stock

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Kulean Microsystems

USA . 1,180 parts In-Stock

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UHIMA Technologies

Türkiye . 620 parts In-Stock

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Corohmni

South Africa . 149 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Onsemi with the NRVBM120LT3G diode rectifier. This product is designed to meet the highest industry standards, making it perfect for a wide range of applications. With its advanced technology and superior performance, customers can trust that this diode will deliver optimal results every time. Say goodbye to worries about overheating or inefficiency - Onsemi has you covered with the NRVBM120LT3G. Trust in Onsemi for all your diode and rectifier needs and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable, lightweight, and cost-effective, making it a good choice for electronic components.

Config: SINGLE

Single configuration simplifies circuit design and makes it easier to implement in various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in a wide range of environments.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speeds, ideal for high-frequency applications.

Maximum Output Current: 1 A

High maximum output current allows for efficient power handling and versatility in various circuits.

Maximum Repetitive Peak Reverse Voltage: 20 V

High reverse voltage capability ensures reliable and safe operation in diverse circuit conditions.

Technical Specifications

Diodes & Rectifiers NRVBM120LT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.26 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBM120LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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