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NRVBD660CTG-VF01

Onsemi

NRVBD660CTG-VF01 by Onsemi

NRVBD660CTG-VF01 by Onsemi is a Schottky rectifier diode with 60V max repetitive peak reverse voltage, 0.9V max forward voltage, and 3A max output current. It is ideal for fast recovery power applications, operating b/w -65 °C to 175°C. The diode has a common cathode configuration in a small outline package suitable for surface mount technology.

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AZTECH Wire

Italy . 67 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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Corphita

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Overview

Discover the NRVBD660CTG-VF01 by Onsemi, a high-quality diode & rectifier designed for fast recovery power applications. With Onsemi's reputation for excellence, this product offers customers unbeatable value and benefits. From its common cathode configuration to its small outline package style, this diode boasts reliability and efficiency. Whether you're in automotive, industrial, or consumer electronics, this Schottky technology diode is the perfect solution for your power needs. Experience the advantage of Onsemi with the NRVBD660CTG-VF01.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, making the diode reliable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient power distribution and management in the circuit.

Surface Mount: YES

Surface mount capability enables easy and secure installation on circuit boards, saving space and facilitating automated assembly processes.

Maximum Reverse Current: 100 uA

Low reverse current ensures minimal power losses and enhances the efficiency of the diode in preventing current flow in the reverse direction.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor, ideal for space-constrained applications and easy placement on circuit boards.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces the risk of error during installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style allows for high component density on the board, optimizing space utilization in the circuit design.

Application: FAST RECOVERY POWER

Designed for fast recovery power applications, offering quick response times and efficient power handling capabilities.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures reliable performance in a wide range of operating conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for usage in extreme cold environments without compromising the diode's functionality.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and resistance to corrosion, ensuring secure and durable connections.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and reduces the chances of misalignment during assembly.

Case Connection: CATHODE

Cathode case connection ensures proper polarity orientation and simplifies the circuit design by providing a reference point for connection.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time allows for efficient soldering process and prevents overheating of the diode during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure solder joints and proper bonding of the diode during the assembly process.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and performance consistency in automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type enables efficient conversion of AC to DC power, making it suitable for various power supply and control applications.

Maximum Forward Voltage (VF): 0.9 V

Low forward voltage drop ensures minimal power losses and high efficiency in converting electrical energy in the forward direction.

Maximum Output Current: 3 A

High maximum output current rating allows for the handling of large power loads, making the diode suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop, enhancing the diode's efficiency in power conversion applications.

Terminal Form: GULL WING

Gull wing terminal form provides secure mechanical and electrical connections, ensuring reliability under varying operating conditions.

No. of Elements: 2

Having 2 elements allows for efficient power distribution and management within the diode, enhancing its overall performance.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage rating ensures robust performance in preventing reverse current flow and voltage spikes in the circuit.

Maximum Non Repetitive Peak Forward Current: 75 A

High maximum non-repetitive peak forward current rating allows for the diode to handle short-duration high current surges without damage.

Diode Element Material: SILICON

Silicon material in diode elements provides high conductivity and reliability, ensuring stable performance over extended periods of use.

Technical Specifications

Diodes & Rectifiers NRVBD660CTG-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

100 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBD660CTG-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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