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NRVBD650CTG

Onsemi

NRVBD650CTG by Onsemi

NRVBD650CTG by Onsemi is a fast recovery rectifier diode with common cathode configuration. It has a max reverse voltage of 50V, forward voltage of 0.9V, and output current of 3A. Ideal for applications requiring high-speed switching in automotive electronics due to AEC-Q101 compliance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,837 parts In-Stock

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Digiode

USA . 305 parts In-Stock

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.111

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$0.101

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$0.091

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2,000

$0.111

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$0.091

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AZTECH Wire

Italy . 489 parts In-Stock

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$17.760

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Problanco Electronics

Mexico . 6,561 parts In-Stock

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SupplyDigital Components

Austria . 5,506 parts In-Stock

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TANS Electronics

Latvia . 5,274 parts In-Stock

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Corphita

USA . 1,726 parts In-Stock

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UHIMA Technologies

Türkiye . 911 parts In-Stock

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Kulean Microsystems

USA . 184 parts In-Stock

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Corohmni

South Africa . 91 parts In-Stock

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Overview

Experience the unparalleled quality of Onsemi with the NRVBD650CTG diode rectifier. This product offers fast recovery and a maximum output current of 3A, making it ideal for a wide range of applications. With a maximum reverse voltage of 50V and AEC-Q101 reference standard, this diode ensures reliable performance in extreme temperature conditions. Trust in Onsemi's expertise to deliver exceptional value and benefits to meet your needs. Upgrade to the NRVBD650CTG and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the diodes, ensuring a longer lifespan for the product.

Maximum Reverse Current: 100 uA

Low reverse current ensures minimal power loss in the circuit, making the product energy efficient.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Technology: SCHOTTKY

Schottky diodes have a low forward voltage drop and fast switching capabilities, making this product efficient and responsive.

Maximum Output Current: 3 A

Can handle high current loads, making it suitable for various power applications.

Technical Specifications

Diodes & Rectifiers NRVBD650CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

100 uA

Reverse Test Voltage:

50 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBD650CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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