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NRVBD360VT4G

Onsemi

NRVBD360VT4G by Onsemi

NRVBD360VT4G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max reverse voltage of 60V. It is designed for power applications, operates b/w -65 °C to 175°C, and features a small outline package style suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,454 parts In-Stock

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Bristol Electronics

USA . 5,000 parts In-Stock

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Flip Electronics

USA . 2,583 parts In-Stock

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Digiode

USA . 1,416 parts In-Stock

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Andel Nordic

Denmark . 2,208 parts In-Stock

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$0.790

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$0.551

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$0.551

2,208

$0.790

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$0.551

$0.551

AZTECH Wire

Italy . 802 parts In-Stock

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$14.480

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802

$14.480

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Component Stockers USA

USA . 649 parts In-Stock

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$99.990

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649

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Kulean Microsystems

USA . 8,348 parts In-Stock

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SupplyDigital Components

Austria . 7,090 parts In-Stock

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TANS Electronics

Latvia . 5,015 parts In-Stock

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Problanco Electronics

Mexico . 4,642 parts In-Stock

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RC Electronics

USA . 4,487 parts In-Stock

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Corphita

USA . 871 parts In-Stock

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UHIMA Technologies

Türkiye . 629 parts In-Stock

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Corohmni

South Africa . 276 parts In-Stock

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Overview

Discover the NRVBD360VT4G by Onsemi, a top-quality Schottky rectifier diode designed for power applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 60V, this diode offers unbeatable performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode guarantees superior quality and durability. Whether you're working on automotive, industrial, or consumer electronics projects, this diode's small outline package style and single terminal position make it easy to integrate into your designs. Experience the value and benefits of the NRVBD360VT4G and take your projects to the next level with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy packages are lightweight and resistant to moisture and corrosion, making the product durable and long-lasting.

Surface Mount: YES

Surface mount diodes are easier to install, take up less space on a circuit board, and have better thermal performance compared to through-hole diodes.

Maximum Reverse Current: 200 uA

Low reverse current ensures minimal power loss and efficient operation of the diode.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures and operate reliably in harsh environments.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, making them ideal for high-frequency and high-efficiency applications.

Technical Specifications

Diodes & Rectifiers NRVBD360VT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

200 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBD360VT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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