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NRVBB2535CTLT4G

Onsemi

NRVBB2535CTLT4G by Onsemi

NRVBB2535CTLT4G by Onsemi is a Schottky rectifier diode with 35V max reverse voltage and 12.5A max output current. It is commonly used in power applications, operates b/w -65 to 125 °C, and features a common cathode configuration for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 65,000 parts In-Stock

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Vyrian

USA . 5,334 parts In-Stock

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Digiode

USA . 1,969 parts In-Stock

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Ampacity Inc.

Singapore . 1,363 parts In-Stock

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$0.010

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AZTECH Wire

Italy . 643 parts In-Stock

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$9.900

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Component Stockers USA

USA . 754 parts In-Stock

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$34.840

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Problanco Electronics

Mexico . 7,200 parts In-Stock

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TANS Electronics

Latvia . 7,125 parts In-Stock

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Corphita

USA . 1,843 parts In-Stock

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Kulean Microsystems

USA . 1,682 parts In-Stock

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SupplyDigital Components

Austria . 1,419 parts In-Stock

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UHIMA Technologies

Türkiye . 699 parts In-Stock

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Corohmni

South Africa . 185 parts In-Stock

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Overview

Experience the cutting-edge technology of Onsemi with the NRVBB2535CTLT4G diode rectifier. Designed for power applications, this Schottky diode offers high-quality performance and reliability. With a maximum output current of 12.5 A and a maximum repetitive peak reverse voltage of 35 V, this diode is perfect for various electronic projects. Trust in Onsemi's reputation for excellence and innovation, and take your projects to the next level with the NRVBB2535CTLT4G diode rectifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easier circuit design and connection, simplifying the overall setup.

Surface Mount: YES

Facilitates easy installation on circuit boards, saving time and effort.

Maximum Reverse Current: 10000 uA

Ensures efficient operation and prevents damage due to reverse current flow.

Package Shape: RECTANGULAR

Fits well in standard electronic setups, making integration seamless.

No. of Terminals: 2

Simplifies connection and reduces complexity in circuit design.

Application: POWER

Suitable for power applications, providing reliable performance under high current conditions.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring stable operation in various environments.

Minimum Operating Temperature: -65 °C

Allows for use in low-temperature conditions without compromising performance.

Terminal Finish: MATTE TIN

Provides a good electrical connection and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

Simplifies installation and reduces the chances of wiring errors.

Case Connection: CATHODE

Convenient for connecting to the cathode terminal, ensuring proper functionality.

Maximum Forward Voltage (VF): 0.55 V

Ensures low voltage drop and efficient energy transfer in the circuit.

Maximum Output Current: 12.5 A

Capable of handling high current loads, suitable for power applications.

Technology: SCHOTTKY

Offers fast switching speed and low forward voltage drop, optimizing performance.

Terminal Form: GULL WING

Facilitates easy soldering onto circuit boards, improving assembly efficiency.

No. of Elements: 2

Provides versatility in circuit design and expands the application possibilities.

Maximum Repetitive Peak Reverse Voltage: 35 V

Handles high reverse voltage without breakdown, ensuring component reliability.

Maximum Non Repetitive Peak Forward Current: 150 A

Capable of handling high transient currents without damage, improving overall robustness.

Diode Element Material: SILICON

Offers high conductivity and reliability, ensuring stable performance over time.

Technical Specifications

Diodes & Rectifiers NRVBB2535CTLT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

12.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

35 V

Maximum Reverse Current:

10000 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBB2535CTLT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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