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NRVBA340T3G

Onsemi

NRVBA340T3G by Onsemi

NRVBA340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.45V and a max output current of 3A. It is designed for power applications, has a reverse test voltage of 40V, and operates in temperatures ranging from -55°C to 150°C.

Median Price

$0.598

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$0.276

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$0.276

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EXC GmbH

Germany . 5,000 parts In-Stock

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$0.327

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$0.327

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DF Sales Co.

USA . 75 parts In-Stock

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$0.870

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75

$0.870

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DF Sales Co.

USA . 75 parts In-Stock

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$0.870

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75

$0.870

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Chip Stock

USA . 297,866 parts In-Stock

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Vyrian

USA . 5,191 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,809 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 4,113 parts In-Stock

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Digiode

USA . 1,591 parts In-Stock

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Sensible Micro Corp

USA . 310 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 142 parts In-Stock

1+ parts

$0.060

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142

$0.060

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Corohmni

South Africa . 127 parts In-Stock

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$0.270

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$0.270

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Continental Prestige Electronics

USA . 4,556 parts In-Stock

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$0.276

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$0.270

4,556

$0.276

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$0.270

Argo Parts USA

USA . 3,380 parts In-Stock

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$0.276

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$0.268

3,380

$0.276

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$0.268

Netroflash

USA . 1,000 parts In-Stock

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$0.276

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$0.262

10k+ parts

$0.257

1,000

$0.276

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$0.262

$0.257

Ampacity Inc.

Singapore . 780 parts In-Stock

1+ parts

$1.010

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780

$1.010

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Semicontronic

India . 678 parts In-Stock

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$1.010

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$0.985

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$0.980

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678

$1.010

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$0.980

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AZTECH Wire

Italy . 230 parts In-Stock

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$11.591

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Perfect Parts

USA . 547,884 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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RC Electronics

USA . 52,412 parts In-Stock

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Problanco Electronics

Mexico . 8,391 parts In-Stock

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Kulean Microsystems

USA . 6,623 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 5,626 parts In-Stock

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iodParts Technologies Inc.

India . 4,809 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,127 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,945 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 899 parts In-Stock

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Advanced Electronics

New Zealand . 550 parts In-Stock

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Corphita

USA . 362 parts In-Stock

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Overview

Discover the NRVBA340T3G, a high-quality rectifier diode by Onsemi that is designed to deliver exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode offers numerous advantages for various power applications. With its small outline package style, surface mount capability, and dual terminal position, it provides easy installation and optimal functionality. The NRVBA340T3G boasts a maximum reverse test voltage of 40V, a maximum output current of 3A, and a maximum forward voltage of 0.45V. Its Schottky technology ensures efficient power conversion while its silicone diode element material guarantees durability. Whether you're working on power circuits or other electronic projects, the NRVBA340T3G is your go-to solution for superior performance and long-lasting reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the diode, making it suitable for various applications.

Maximum Reverse Current: 300 uA

Low maximum reverse current ensures minimal power loss in the circuit, making the diode efficient in power management.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without degradation, enhancing its reliability in different environments.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching times compared to regular diodes, making them ideal for high-frequency applications where efficiency is crucial.

Technical Specifications

Diodes & Rectifiers NRVBA340T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

300 uA

Reverse Test Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBA340T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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