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NRVBA2H100T3G

Onsemi

NRVBA2H100T3G by Onsemi

NRVBA2H100T3G by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward voltage of 0.79V. It has a max output current of 2A, making it suitable for power applications. With an operating temperature range from -65°C to 175°C, it is ideal for high-power electronic systems.

Median Price

$0.721

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$1.101

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10

$1.101

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Vyrian

USA . 6,398 parts In-Stock

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6,398

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Digiode

USA . 2,160 parts In-Stock

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2,160

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Bristol Electronics

USA . 940 parts In-Stock

1+ parts

-

100+ parts

$0.341

1k+ parts

$0.168

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940

-

$0.341

$0.168

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Connect4Technologies Inc.

Canada . 79 parts In-Stock

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79

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 396 parts In-Stock

1+ parts

$1.079

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396

$1.079

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$1.101

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$1.079

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1,000

$1.101

$1.079

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Ampacity Inc.

Singapore . 1,114 parts In-Stock

1+ parts

$2.010

100+ parts

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1,114

$2.010

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AZTECH Wire

Italy . 536 parts In-Stock

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$12.651

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536

$12.651

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Perfect Parts

USA . 15,178 parts In-Stock

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15,178

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Problanco Electronics

Mexico . 7,047 parts In-Stock

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7,047

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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Kulean Microsystems

USA . 4,935 parts In-Stock

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4,935

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SupplyDigital Components

Austria . 3,163 parts In-Stock

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TANS Electronics

Latvia . 2,900 parts In-Stock

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2,900

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Corphita

USA . 851 parts In-Stock

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851

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UHIMA Technologies

Türkiye . 93 parts In-Stock

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93

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Overview

Discover the NRVBA2H100T3G by Onsemi, a top-quality rectifier diode designed for power applications. Manufactured by industry leader Onsemi, this SCHOTTKY technology diode offers superior performance and reliability. With a maximum reverse voltage of 100V and output current of 2A, this diode is perfect for various power circuits. Trust in Onsemi's expertise and invest in a product that guarantees efficiency and durability. Upgrade your projects with the NRVBA2H100T3G and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product suitable for various applications.

Config: SINGLE

Single configuration simplifies installation and maintenance, making it easier to use in a wide range of projects.

Surface Mount: YES

Surface mount capability allows for efficient and space-saving PCB design, ideal for compact electronic devices.

Maximum Reverse Current: 8 uA

Low reverse current ensures energy efficiency and optimal performance.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and integration into different systems.

Reverse Test Voltage: 100 V

High reverse test voltage provides robust protection against reverse voltage spikes.

No. of Terminals: 2

Having two terminals simplifies the connection process, enhancing convenience during installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact designs.

Application: POWER

Designed for power applications, ensuring reliable performance under high demand.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for use in extreme environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality in various conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and reliable solder joints.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time allows for quick and efficient soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder joints and component integrity.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design enables efficient conversion of AC to DC, suitable for power supply applications.

Maximum Forward Voltage (VF): 0.79 V

Low forward voltage drop minimizes power loss and improves efficiency.

Maximum Output Current: 2 A

High output current allows for the handling of heavy loads and power distribution.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop for enhanced performance.

Terminal Form: J BEND

J bend terminal form facilitates easy PCB mounting and soldering, optimizing installation process.

Maximum Repetitive Peak Reverse Voltage: 100 V

High repetitive peak reverse voltage rating ensures robust protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 130 A

High non-repetitive peak forward current handling capability makes the product suitable for high-power applications.

Diode Element Material: SILICON

Silicon diode element material offers durability and reliability for long-term performance.

Technical Specifications

Diodes & Rectifiers NRVBA2H100T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.79 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

130 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

8 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBA2H100T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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