Loading...

NRVBA1H100T3G

Onsemi

NRVBA1H100T3G by Onsemi

NRVBA1H100T3G by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward current of 1A. It operates b/w -65 to 175 °C, making it suitable for automotive applications due to AEC-Q101 compliance. This single-configured diode comes in a small outline package with matte tin finish for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,932 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,932

-

-

-

-

Chip Stock

USA . 5,080 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,080

-

-

-

-

Digiode

USA . 1,511 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,511

-

-

-

-

Sensible Micro Corp

USA . 27 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 577 parts In-Stock

1+ parts

$8.420

100+ parts

-

1k+ parts

-

10k+ parts

-

577

$8.420

-

-

-

Kepictronics

USA . 235,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

235,000

-

-

-

-

Perfect Parts

USA . 51,979 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

51,979

-

-

-

-

GreenTree Electronics

Israel . 7,674 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,674

-

-

-

-

TANS Electronics

Latvia . 6,361 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,361

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Kulean Microsystems

USA . 2,423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,423

-

-

-

-

Corphita

USA . 1,886 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,886

-

-

-

-

Problanco Electronics

Mexico . 943 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

943

-

-

-

-

iodParts Technologies Inc.

India . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

SupplyDigital Components

Austria . 805 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

805

-

-

-

-

UHIMA Technologies

Türkiye . 330 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

330

-

-

-

-

Corohmni

South Africa . 322 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

322

-

-

-

-

Overview

Unlock a world of possibilities with the NRVBA1H100T3G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are perfect for a wide range of applications. From automotive to industrial uses, this product offers customers exceptional value with its reliable performance, high efficiency, and durability. Say goodbye to worries about overheating or power surges, as this Schottky diode ensures maximum output current and peak reverse voltage capabilities. Trust Onsemi to provide you with the best technology for your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the diode and ensures durability.

Config: SINGLE

Simplified design with a single diode configuration for easy installation and maintenance.

Surface Mount: YES

Allows for easy and efficient PCB mounting, saving space and assembly time.

Maximum Reverse Current: 40 uA

Low reverse current ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into various electronic devices.

No. of Terminals: 2

Simple two-terminal design for straightforward connectivity.

Package Style (Meter): SMALL OUTLINE

Compact small outline design for space-saving installation.

Maximum Operating Temperature: 175 °C

Wide temperature range for versatile applications and reliable performance.

Minimum Operating Temperature: -65 °C

Suitable for operation in extreme low temperature environments.

Terminal Finish: MATTE TIN

Matte tin finish for enhanced conductivity and solderability.

Terminal Position: DUAL

Dual terminal position for flexible wiring options.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a short duration without damage.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for robust soldering.

Reference Standard: AEC-Q101

Compliance with automotive quality standard for reliable performance in automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode for efficient conversion of AC to DC current.

Maximum Forward Voltage (VF): 0.84 V

Low forward voltage drop for energy-efficient operation.

Maximum Output Current: 1 A

High output current capability for various electronic devices.

Technology: SCHOTTKY

Schottky technology for fast switching and lower power dissipation.

Terminal Form: J BEND

J bend terminal form for easy mounting and secure connection.

Maximum Repetitive Peak Reverse Voltage: 100 V

High reverse voltage rating for reliable operation in various circuit configurations.

Maximum Non Repetitive Peak Forward Current: 50 A

High peak forward current rating for overcurrent protection and transient surge handling.

Diode Element Material: SILICON

Silicon diode element for high efficiency and durability.

Technical Specifications

Diodes & Rectifiers NRVBA1H100T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

40 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBA1H100T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20