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NRVB2045MFST3G

Onsemi

NRVB2045MFST3G by Onsemi

NRVB2045MFST3G by Onsemi is a Schottky rectifier diode with 45V reverse voltage, 20A output current, and 0.61V forward voltage. It is used for efficiency applications in a small outline package with dual terminals and matte tin finish. Operating temperature ranges from -55 to 150 °C.

Median Price

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Lifecycle Status

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1k+

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AZTECH Wire

Italy . 578 parts In-Stock

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Problanco Electronics

Mexico . 7,971 parts In-Stock

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Kulean Microsystems

USA . 7,127 parts In-Stock

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SupplyDigital Components

Austria . 2,255 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,456 parts In-Stock

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Corohmni

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UHIMA Technologies

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Overview

Discover the NRVB2045MFST3G by Onsemi, a high-quality rectifier diode that offers unmatched efficiency and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. With a maximum output current of 20 A and a maximum reverse voltage of 45 V, this Schottky technology diode ensures optimal performance in all conditions. Experience the value and benefits of this product, from its small outline package to its dual terminal position, making it easy to install and use. Upgrade your electronic projects with the NRVB2045MFST3G and see the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable.

Config: SINGLE

The single configuration simplifies the installation process and reduces the chances of errors.

Surface Mount: YES

Surface mount capability makes it easier to integrate this diode into electronic circuit boards.

Maximum Reverse Current: 600 uA

Low maximum reverse current ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and organization on circuit boards.

No. of Terminals: 5

Having 5 terminals provides flexibility in connecting the diode to other components.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs.

Application: EFFICIENCY

Designed for efficiency, making it suitable for applications where energy conservation is critical.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the diode's reliability in various environments.

Minimum Operating Temperature: -55 °C

The wide range of operating temperatures makes this diode suitable for a variety of conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good conductivity and resistance to corrosion.

Terminal Position: DUAL

Dual terminal position allows for different mounting options and flexible connections.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and ensures proper polarity.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time helps prevent damage to the diode during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and strong connections.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC and other power applications.

Maximum Forward Voltage (VF): 0.61 V

Low forward voltage results in minimal power loss and efficient performance.

Maximum Output Current: 20 A

High maximum output current allows for handling of heavy loads and high power applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop for improved efficiency.

Terminal Form: FLAT

Flat terminal form provides easy mounting and secure connections.

Maximum Repetitive Peak Reverse Voltage: 45 V

High maximum voltage capability provides protection against reverse polarity and voltage spikes.

Maximum Non Repetitive Peak Forward Current: 400 A

High maximum forward current allows for handling of short-duration high power surges.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliable performance in various applications.

Technical Specifications

Diodes & Rectifiers NRVB2045MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.61 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

600 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVB2045MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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