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NLX1G125FCT1G

Onsemi

NLX1G125FCT1G by Onsemi

NLX1G125FCT1G by Onsemi is a 5V bus driver with 10.5ns propagation delay, operating b/w -55 to 125 °C. It features a 3-STATE output and is ideal for military-grade applications requiring CMOS technology in a compact GRID ARRAY package.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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AZTECH Wire

Italy . 50 parts In-Stock

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Kulean Microsystems

USA . 6,263 parts In-Stock

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Problanco Electronics

Mexico . 5,191 parts In-Stock

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UHIMA Technologies

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Vigor

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Corphita

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SupplyDigital Components

Austria . 351 parts In-Stock

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TANS Electronics

Latvia . 329 parts In-Stock

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Microchip USA

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Overview

Enhance the performance of your electronic devices with the NLX1G125FCT1G by Onsemi. Crafted with precision and expertise, Onsemi's reputation for quality shines through in this bus driver & transceivers category product. With a nominal supply voltage of 5V and 3-state output characteristics, this versatile component is designed to elevate your circuits to new heights. Whether you're working on military-grade applications or intricate grid arrays, the NLX1G125FCT1G offers unmatched value, efficiency, and reliability. Upgrade your projects today with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and enhances the overall reliability of the product.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration into circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Operates at the standard 5V supply voltage, ensuring compatibility with a wide range of systems.

Propagation Delay (tpd): 10.5 ns

Fast propagation delay helps in achieving quick data transmission and communication.

Output Characteristics: 3-STATE

3-state output allows for high flexibility and control over the data transmission process.

Temperature Grade: MILITARY

Military-grade temperature range ensures reliable operation in extreme environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product efficient and reliable.

Technical Specifications

Bus Driver & Transceivers NLX1G125FCT1G attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Family:

FCT

JESD-30 Code:

R-PBGA-B5

Length:

1.4 mm

Logic IC Type:

No. of Bits:

1

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Propagation Delay (tpd):

10.5 ns

Qualification:

Not Qualified

Maximum Seated Height:

.5 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

.9 mm

Trade Compliance

NLX1G125FCT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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