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NL7SZ19DBVT1G

Onsemi

NL7SZ19DBVT1G by Onsemi

NL7SZ19DBVT1G by Onsemi is a CMOS multiplexer with 5.4ns propagation delay and 3.3V nominal voltage. Ideal for military applications, it features a small outline package with 6 terminals and operates b/w -55 to 125 °C temperature range.

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 28 parts In-Stock

1+ parts

$0.330

100+ parts

$0.121

1k+ parts

$0.073

10k+ parts

$0.041

28

$0.330

$0.121

$0.073

$0.041

Rochester

USA . 204,000 parts In-Stock

1+ parts

-

100+ parts

$0.046

1k+ parts

$0.038

10k+ parts

$0.034

204,000

-

$0.046

$0.038

$0.034

Verical

USA . 204,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.043

204,000

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-

-

$0.043

Distributors (In-Stock)

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Digiode

USA . 1,731 parts In-Stock

1+ parts

$0.036

100+ parts

-

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1,731

$0.036

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.063

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300

$0.063

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Vyrian

USA . 4,421 parts In-Stock

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4,421

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Distributors (Availability)

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Ampacity Inc.

Singapore . 101,960 parts In-Stock

1+ parts

$0.032

100+ parts

-

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-

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-

101,960

$0.032

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Corphita

USA . 443 parts In-Stock

1+ parts

$0.034

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443

$0.034

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Corohmni

South Africa . 116 parts In-Stock

1+ parts

$0.038

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-

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116

$0.038

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Continental Prestige Electronics

USA . 3,981 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

$0.062

3,981

$0.063

-

-

$0.062

Argo Parts USA

USA . 3,872 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

3,872

$0.063

-

-

$0.061

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

$0.060

10k+ parts

$0.059

50

$0.063

-

$0.060

$0.059

Vigor

Singapore . 224 parts In-Stock

1+ parts

$0.250

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224

$0.250

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Problanco Electronics

Mexico . 5,111 parts In-Stock

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Kulean Microsystems

USA . 4,837 parts In-Stock

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TANS Electronics

Latvia . 4,259 parts In-Stock

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SupplyDigital Components

Austria . 336 parts In-Stock

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336

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UHIMA Technologies

Türkiye . 248 parts In-Stock

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248

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Microchip USA

USA . 162 parts In-Stock

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162

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Overview

Enhance your electronic projects with the NL7SZ19DBVT1G by Onsemi! Manufactured by industry leaders, this multiplexer & demultiplexer offers high-quality performance and reliability. Ideal for a wide range of applications, this product provides seamless switching capabilities with minimal delay, making it perfect for demanding tasks. With a compact design and versatile features, customers can expect exceptional value and superior results. Upgrade your projects today with the NL7SZ19DBVT1G and experience the benefits of top-tier technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the multiplexer & demultiplexer, ensuring long-lasting performance.

Propagation Delay At Nominal Supply: 5.4 ns

Low propagation delay ensures fast data processing and high-speed operation, making this product suitable for time-sensitive applications.

Nominal Supply Voltage: 3.3 V

Suitable voltage level for efficient power consumption and compatibility with various systems.

Maximum Operating Temperature: 125 °C

Wide temperature range allows the multiplexer & demultiplexer to function reliably in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving overall performance and efficiency.

Technical Specifications

Multiplexer & Demultiplexer NL7SZ19DBVT1G attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Outputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.4 ns

Propagation Delay (tpd):

11 ns

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.5 mm

Trade Compliance

NL7SZ19DBVT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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