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NE5230N

Onsemi

NE5230N by Onsemi

NE5230N by Onsemi is an operational amplifier with a max input offset voltage of 4000 uV and nominal common mode reject ratio of 95 dB. It operates within a supply voltage range of 1.8-15 V, making it suitable for applications requiring high precision amplification in commercial temperature environments. With a min voltage gain of 50000 and unity gain bandwidth of 600 kHz, this op amp is ideal for signal conditioning and filtering tasks.

Median Price

$0.848

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

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Farnell

UK . 850 parts In-Stock

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$0.829

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850

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$0.829

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Rochester

USA . 646 parts In-Stock

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$0.832

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$0.691

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$0.616

646

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$0.832

$0.691

$0.616

DigiKey

USA . 646 parts In-Stock

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$1.040

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646

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$1.040

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Verical

USA . 646 parts In-Stock

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$0.864

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$0.770

646

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$0.864

$0.770

Distributors (In-Stock)

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Freelance Electronics

USA . 5 parts In-Stock

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$0.574

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$0.574

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Digiode

USA . 3,644 parts In-Stock

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$0.649

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Vyrian

USA . 1,099 parts In-Stock

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$0.683

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$0.683

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American Microsemiconductor Inc.

USA . 38 parts In-Stock

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$3.130

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$3.130

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Forefront Electronics and Design

USA . 1 parts In-Stock

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$24.500

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1

$24.500

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Chip Stock

USA . 4,500 parts In-Stock

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Anansix

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DigiKey Marketplace

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R&J Components

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Digital Electronic Gebert Verwaltungs UG

Germany . 254 parts In-Stock

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EPE Components Inc.

USA . 165 parts In-Stock

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Bristol Electronics

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SPM Sales

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Fibra_Brandt Electronic GMBH

Germany . 15 parts In-Stock

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A2Z Electronics, Inc.

USA . 6 parts In-Stock

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MISTER SPROCKETS

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Distributors (Availability)

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Corohmni

South Africa . 494 parts In-Stock

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$0.574

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494

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Corphita

USA . 2,095 parts In-Stock

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$0.615

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$0.615

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Vigor

Singapore . 218 parts In-Stock

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$0.660

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QUARKTWIN TECHNOLOGY LTD

USA . 9,300 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 6,883 parts In-Stock

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Microchip USA

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Epart123

USA . 3,800 parts In-Stock

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$0.484

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$0.461

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TANS Electronics

Latvia . 2,650 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 1,546 parts In-Stock

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UNI Independent Distributors

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Metaverse IC Inc.

Canada . 913 parts In-Stock

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Continental Prestige Electronics

USA . 850 parts In-Stock

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$0.646

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UHIMA Technologies

Türkiye . 406 parts In-Stock

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Perfect Parts

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Overview

Discover the NE5230N by Onsemi, a high-quality operational amplifier perfect for a wide range of applications. With its reliable manufacturer and advanced technology, this op amp offers customers exceptional value and benefits. Whether you need precise signal amplification, voltage feedback, or programmable power options, the NE5230N delivers unmatched performance. Experience superior quality and reliability with Onsemi's NE5230N operational amplifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making this product suitable for various applications.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage ensures accurate signal processing and minimizes errors in the output.

Nominal Common Mode Reject Ratio: 95 dB

High common mode reject ratio helps in rejecting common mode noise and interference for cleaner signal output.

Nominal Unity Gain Bandwidth: 600 kHz

High unity gain bandwidth ensures stable and accurate performance at various gain settings.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides high bandwidth, stability, and versatility in different circuit configurations.

Technical Specifications

Operational Amplifiers (Op Amps) NE5230N attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

1.8/15/±.9/±7.5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Programmable Power:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

600 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

95 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

50000

Nominal Slew Rate:

0.25 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

7.5 V

Maximum Supply Voltage:

9 V

Maximum Negative Supply Voltage:

-7.5 V

Minimum Negative Supply Voltage:

-9 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

1.7 mA

Physical Characteristics

Length:

0.385 in (9.78 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.175 in (4.45 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

NE5230N Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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