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NE5230DR2

Onsemi

NE5230DR2 by Onsemi

NE5230DR2 by Onsemi is an Operational Amplifier with 4000uV Max Input Offset Voltage, 95dB Nominal CMRR, and 600kHz Unity Gain Bandwidth. Ideal for applications requiring low bias current and high voltage gain in a compact small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 73,000 parts In-Stock

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Vyrian

USA . 12,044 parts In-Stock

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Digiode

USA . 692 parts In-Stock

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Semtec, LLC

USA . 79 parts In-Stock

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AZTECH Wire

Italy . 728 parts In-Stock

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$8.730

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SupplyDigital Components

Austria . 6,590 parts In-Stock

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Kulean Microsystems

USA . 4,984 parts In-Stock

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Problanco Electronics

Mexico . 2,692 parts In-Stock

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TANS Electronics

Latvia . 1,995 parts In-Stock

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UHIMA Technologies

Türkiye . 889 parts In-Stock

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Corohmni

South Africa . 429 parts In-Stock

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Corphita

USA . 317 parts In-Stock

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Vigor

Singapore . 244 parts In-Stock

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Microchip USA

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Overview

Experience unmatched performance and reliability with the NE5230DR2 operational amplifier by Onsemi. Crafted with precision and expertise, this product offers exceptional value in various applications such as signal processing, instrumentation, and control systems. With a high common mode rejection ratio and low bias current, this amplifier ensures superior accuracy and stability in your designs. Trust Onsemi to deliver top-notch quality and innovation, setting new standards in the industry. Elevate your projects with the NE5230DR2 and unlock endless possibilities for success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the operational amplifier.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage helps in minimizing errors in the output signal, making this op amp suitable for precision applications.

Nominal Common Mode Reject Ratio: 95 dB

High common mode rejection ratio indicates the ability of the op amp to reject common-mode signals, ensuring accurate amplification of differential signals.

Nominal Supply Voltage / Vsup (V): 7.5

Stable supply voltage makes this op amp reliable and suitable for various applications within the specified range.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the operational amplifier circuit.

Minimum Voltage Gain: 50000

High voltage gain allows for amplification of small input signals with minimal distortion, making this op amp suitable for amplification tasks.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise performance, making this op amp suitable for precision measurement and signal processing applications.

Maximum Supply Current: 1.7 mA

Low supply current consumption makes this op amp energy-efficient and suitable for battery-operated devices.

Technical Specifications

Operational Amplifiers (Op Amps) NE5230DR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

1.8/15/±.9/±7.5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Programmable Power:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

600 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

95 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

50000

Nominal Slew Rate:

0.25 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

7.5 V

Maximum Supply Voltage:

9 V

Maximum Negative Supply Voltage:

-7.5 V

Minimum Negative Supply Voltage:

-9 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.7 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

NE5230DR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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