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NCV8852DR2G

Onsemi

NCV8852DR2G by Onsemi

NCV8852DR2G by Onsemi is a current-mode switching controller with a max switching frequency of 501 kHz. It operates with a nominal input voltage range of 3.4V to 36V, making it suitable for various applications requiring efficient power management in compact spaces. The package style is small outline, ideal for surface mount designs in electronic devices.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

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Bristol Electronics

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Vigor

Singapore . 800 parts In-Stock

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AZTECH Wire

Italy . 177 parts In-Stock

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Component Stockers USA

USA . 643 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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TANS Electronics

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Overview

Discover the NCV8852DR2G by Onsemi, a cutting-edge switching regulator & controller that promises high-quality performance and reliability. Manufactured by industry leader Onsemi, this versatile product boasts a sleek rectangular design with a small outline package style for easy integration. Ideal for a wide range of applications, the NCV8852DR2G offers customers exceptional value with its current-mode control mode and pulse width modulation technique, ensuring efficient operation with minimal input voltage requirements. Elevate your projects with the NCV8852DR2G and experience the benefits of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and insulation, making it suitable for various environments.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration onto circuit boards, saving space and simplifying assembly.

Control Mode: CURRENT-MODE

Current-mode control provides a fast and accurate response to load changes, ensuring stable and efficient power regulation.

Maximum Switching Frequency: 501 kHz

The high maximum switching frequency allows for quick response to load changes and efficient power conversion, making it ideal for demanding applications.

Control Technique: PULSE WIDTH MODULATION

Pulse width modulation control offers precise regulation of output voltage, improving efficiency and reducing ripple in the output.

Technical Specifications

Switching Regulators & Controllers NCV8852DR2G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

36 V

Minimum Input Voltage:

3.4 V

Nominal Input Voltage:

4 V

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

YES

Switcher Config:

SINGLE

Maximum Switching Frequency:

501 kHz

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

NCV8852DR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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