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NCV1117DT18T5

Onsemi

NCV1117DT18T5 by Onsemi

NCV1117DT18T5 by Onsemi is a fixed positive single output LDO regulator with a max output current of 1A and a dropout voltage of 1.07V. It operates in temperatures ranging from -55 °C to 150°C, making it suitable for automotive applications requiring stable voltage regulation in compact spaces.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 8,489 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 293 parts In-Stock

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Problanco Electronics

Mexico . 4,108 parts In-Stock

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TANS Electronics

Latvia . 2,046 parts In-Stock

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Kulean Microsystems

USA . 1,826 parts In-Stock

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SupplyDigital Components

Austria . 1,234 parts In-Stock

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Corphita

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Vigor

Singapore . 769 parts In-Stock

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Corohmni

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Microchip USA

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UHIMA Technologies

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Overview

Experience superior performance and reliability with the NCV1117DT18T5 by Onsemi, a leading manufacturer in the semiconductor industry. This fixed positive single output LDO regulator is perfect for a wide range of applications, providing a stable output voltage and efficient power management. With AEC-Q100 screening level, bipolar technology, and small outline package style, this product offers exceptional quality and precision. Trust Onsemi to deliver cutting-edge solutions that exceed your expectations. Elevate your designs with the NCV1117DT18T5 and enjoy unmatched value and benefits for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Maximum Dropout Voltage-1: 1.2 V

The low dropout voltage ensures efficient power conversion with minimal energy loss, making it ideal for battery-powered devices.

Operating Temperature (TJ-Max): 150 °C

The wide operating temperature range up to 150 °C allows the regulator to function reliably in demanding conditions.

Technology: BIPOLAR

The bipolar technology used in this LDO regulator ensures high stability and low noise performance, making it suitable for sensitive electronic applications.

Minimum Output Voltage-1: 1.755 V

The minimum output voltage of 1.755 V provides flexibility in powering different components within a circuit.

Nominal Output Voltage-1: 1.8 V

The fixed nominal output voltage of 1.8 V ensures consistent power supply to the connected load, maintaining stability.

Maximum Output Voltage-1: 1.845 V

With a maximum output voltage of 1.845 V, this LDO regulator provides a suitable voltage level for various electronic components.

Maximum Output Current-1: 1 A

The high maximum output current of 1 A allows for powering demanding loads without voltage drop or instability.

Minimum Input Voltage: 3.2 V

The minimum input voltage requirement of 3.2 V ensures compatibility with a wide range of power sources, enhancing the regulator's versatility.

Maximum Input Voltage: 11.8 V

The maximum input voltage of 11.8 V provides protection against voltage surges or fluctuations, ensuring the regulator's reliability and safety.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCV1117DT18T5 attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

1.2 V

Nominal Dropout Voltage-1:

1.07 V

Maximum Input Voltage Absolute:

Maximum Input Voltage:

11.8 V

Minimum Input Voltage:

3.2 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Length:

6.54 mm

Maximum Line Regulation:

.001 %

Maximum Load Regulation:

.006 %

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

2

Operating Temperature (TJ-Max):

150 Cel

Operating Temperature (TJ-Min):

-55 Cel

Maximum Output Current-1:

1 A

Maximum Output Voltage-1:

1.845 V

Minimum Output Voltage-1:

1.755 V

Nominal Output Voltage-1:

1.8 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SMSIP3H,.38,90TB

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

235

Qualification Status:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

2.38 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

BIPOLAR

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.29 mm

Terminal Position:

SINGLE

Maximum Voltage Tolerance:

Width:

6.095 mm

Trade Compliance

NCV1117DT18T5 Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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