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NCS333SQ3T2G

Onsemi

NCS333SQ3T2G by Onsemi

NCS333SQ3T2G by Onsemi is a micropower operational amplifier with low-offset and low-bias features. It has a nominal voltage of 3.3V, max input offset voltage of 10uV, and nominal unity gain bandwidth of 350kHz. Ideal for industrial applications requiring precise signal amplification in compact designs.

Median Price

$2.515

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,735 parts In-Stock

1+ parts

$4.390

100+ parts

$1.610

1k+ parts

$1.090

10k+ parts

-

1,735

$4.390

$1.610

$1.090

-

DigiKey

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.640

66,000

-

-

-

$0.640

Flip Electronics (Authorized)

USA . 66,000 parts In-Stock

1+ parts

-

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66,000

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.056

100+ parts

-

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900

$0.056

-

-

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Digiode

USA . 1,441 parts In-Stock

1+ parts

$4.170

100+ parts

-

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1,441

$4.170

-

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Chip Stock

USA . 77,000 parts In-Stock

1+ parts

-

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77,000

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Flip Electronics

USA . 66,000 parts In-Stock

1+ parts

-

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66,000

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Vyrian

USA . 10,159 parts In-Stock

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10,159

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Bristol Electronics

USA . 2,550 parts In-Stock

1+ parts

-

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2,550

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-

-

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Dan-Mar Components

USA . 2,550 parts In-Stock

1+ parts

-

100+ parts

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2,550

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

$0.053

10k+ parts

-

100

$0.055

-

$0.053

-

Continental Prestige Electronics

USA . 5,087 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

-

10k+ parts

$0.055

5,087

$0.056

-

-

$0.055

Argo Parts USA

USA . 3 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

-

10k+ parts

$0.055

3

$0.056

-

-

$0.055

Vigor

Singapore . 331 parts In-Stock

1+ parts

$0.670

100+ parts

-

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331

$0.670

-

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Corohmni

South Africa . 82 parts In-Stock

1+ parts

$0.820

100+ parts

-

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82

$0.820

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Aztec Data Supply Inc.

USA . 896 parts In-Stock

1+ parts

$2.330

100+ parts

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896

$2.330

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Ampacity Inc.

Singapore . 33,549 parts In-Stock

1+ parts

$3.730

100+ parts

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33,549

$3.730

-

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Corphita

USA . 1,107 parts In-Stock

1+ parts

$3.951

100+ parts

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1,107

$3.951

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AZTECH Wire

Italy . 623 parts In-Stock

1+ parts

$19.040

100+ parts

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623

$19.040

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Perfect Parts

USA . 76,987 parts In-Stock

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76,987

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RC Electronics

USA . 21,600 parts In-Stock

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21,600

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Kepictronics

USA . 8,000 parts In-Stock

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8,000

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TANS Electronics

Latvia . 6,850 parts In-Stock

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6,850

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Kulean Microsystems

USA . 2,460 parts In-Stock

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2,460

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Problanco Electronics

Mexico . 2,416 parts In-Stock

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2,416

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SupplyDigital Components

Austria . 1,802 parts In-Stock

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Authorized Procurement Solutions

USA . 1,743 parts In-Stock

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1,743

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Futuretech Components

Singapore . 680 parts In-Stock

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680

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UHIMA Technologies

Türkiye . 657 parts In-Stock

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657

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Microchip USA

USA . 315 parts In-Stock

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315

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Overview

Experience unparalleled performance and reliability with the NCS333SQ3T2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Operational Amplifiers that are essential for a wide range of applications. From precision instrumentation to industrial automation, this product offers exceptional value with its low-offset, micropower design, and wide temperature range. Trust Onsemi to provide you with the innovative solutions you need for optimal performance and efficiency. Elevate your projects with the NCS333SQ3T2G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Maximum Input Offset Voltage: 10 uV

Low input offset voltage ensures accurate output signal and minimizes errors in the amplification process.

Maximum Average Bias Current (IIB): 0.0004 uA

Low bias current helps in reducing power consumption and improves the overall efficiency of the operational amplifier.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Common Mode Reject Ratio: 118 dB

High common-mode rejection ratio ensures that unwanted noise and interference are effectively suppressed, resulting in a clean output signal.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V makes it compatible with a wide range of applications and power sources.

No. of Terminals: 5

Having 5 terminals allows for versatile connectivity options, making it suitable for various circuit designs and configurations.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations, improving the overall performance of the operational amplifier.

Minimum Voltage Gain: 199526.23

High minimum voltage gain ensures sufficient amplification of input signals, making it suitable for applications requiring high levels of signal amplification.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range allows the operational amplifier to withstand a wide range of operating conditions, making it suitable for industrial applications.

Technical Specifications

Operational Amplifiers (Op Amps) NCS333SQ3T2G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

350 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

118 dB

Input Offset Voltage Limit:

10 uV

Minimum Voltage Gain:

199526.23

Nominal Slew Rate:

0.1 V/us

Maximum Input Offset Current (IIO):

400 pA

Peak Bias Current:

400 pA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Maximum Supply Current:

35 μA

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin - annealed

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.08,25

Trade Compliance

NCS333SQ3T2G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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