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NCS333SN2T1G

Onsemi

NCS333SN2T1G by Onsemi

NCS333SN2T1G by Onsemi is a micropower operational amplifier with low-offset and low-bias features. It operates at an industrial temperature grade, with a nominal voltage of 3.3V and max input offset voltage of 10uV. This Op Amp is ideal for applications requiring precise signal amplification in compact electronic devices.

Median Price

$3.790

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip1Stop

Japan . 47 parts In-Stock

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$3.790

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47

$3.790

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Flip Electronics

USA . 3,000 parts In-Stock

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$0.700

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3,000

$0.700

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Nova Conductors

Japan . 39 parts In-Stock

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$0.760

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Digiode

USA . 2,208 parts In-Stock

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$3.600

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Vyrian

USA . 11,243 parts In-Stock

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Chip Stock

USA . 3,641 parts In-Stock

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DigiKey Marketplace

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Distributors (Availability)

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Continental Prestige Electronics

USA . 5,886 parts In-Stock

1+ parts

$0.669

100+ parts

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$0.656

5,886

$0.669

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$0.656

Argo Parts USA

USA . 2,775 parts In-Stock

1+ parts

$0.669

100+ parts

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$0.649

2,775

$0.669

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$0.649

Vigor

Singapore . 454 parts In-Stock

1+ parts

$0.670

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454

$0.670

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Netroflash

USA . 500 parts In-Stock

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$0.760

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500

$0.760

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Ampacity Inc.

Singapore . 47 parts In-Stock

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$3.220

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47

$3.220

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Corphita

USA . 1,280 parts In-Stock

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$3.411

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Corohmni

South Africa . 176 parts In-Stock

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$3.790

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AZTECH Wire

Italy . 700 parts In-Stock

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$12.536

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700

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Perfect Parts

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SupplyDigital Components

Austria . 7,863 parts In-Stock

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TANS Electronics

Latvia . 4,740 parts In-Stock

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RC Electronics

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Problanco Electronics

Mexico . 881 parts In-Stock

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UHIMA Technologies

Türkiye . 688 parts In-Stock

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Futuretech Components

Singapore . 680 parts In-Stock

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Kulean Microsystems

USA . 521 parts In-Stock

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Microchip USA

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Kepictronics

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GreenTree Electronics

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Authorized Procurement Solutions

USA . 57 parts In-Stock

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Overview

Discover the NCS333SN2T1G by Onsemi, a top-quality operational amplifier that offers unrivaled performance in a compact package. Manufactured by Onsemi, a trusted name in the industry, this Op Amp is perfect for a wide range of applications. With ultra-low bias and exceptional frequency compensation, this product delivers superior results every time. Whether you are working on industrial projects or micropower applications, this amplifier provides unmatched value, precision, and reliability. Upgrade your circuits with the NCS333SN2T1G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and helps in reducing the overall weight of the product.

Maximum Input Offset Voltage: 10 uV

Low input offset voltage ensures accurate results in signal processing applications.

Maximum Average Bias Current (IIB): 0.0004 uA

Low bias current helps in minimizing power consumption and improving overall efficiency.

Surface Mount: YES

Surface mount design allows for easier and more reliable PCB assembly.

Nominal Common Mode Reject Ratio: 118 dB

High common mode rejection ratio ensures better rejection of common-mode noise in the signal.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a supply voltage of 3.3V, making it suitable for low-power applications.

No. of Terminals: 5

Compact size with 5 terminals allows for easy integration into circuit designs with limited space.

Maximum Input Offset Current (IIO): 0.0004 uA

Low input offset current helps in reducing errors in signal processing and amplification.

Maximum Supply Voltage Limit: 7 V

High supply voltage limit provides flexibility in powering the device.

Maximum Operating Temperature: 105 °C

Wide operating temperature range makes it suitable for use in various environments.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the circuit.

Minimum Voltage Gain: 199526.23

High minimum voltage gain allows for accurate amplification of low-level signals.

Minimum Operating Temperature: -40 °C

Operates efficiently in low temperature conditions, suitable for industrial applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and reliability.

Terminal Position: DUAL

Dual terminal position allows for flexibility in PCB layout and connections.

Low-Offset: YES

Low offset ensures accurate amplification and signal processing with minimal error.

Maximum Seated Height: 1.1 mm

Low profile design with maximum seated height of 1.1 mm saves space in compact electronic devices.

Width: 1.5 mm

Narrow width of 1.5 mm allows for easy integration into small circuit designs.

Micropower: YES

Micropower design consumes very low power, suitable for battery-powered applications.

Length: 3 mm

Compact length of 3 mm allows for space-saving integration.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range ensures reliable operation in harsh environments.

Low-Bias: YES

Low bias current helps in reducing power consumption and improving efficiency.

Nominal Unity Gain Bandwidth: 350 kHz

Nominal unity gain bandwidth of 350 kHz ensures good performance in signal amplification applications.

Terminal Form: GULL WING

Gull wing terminal form allows for easy mounting on PCBs and enhances mechanical strength.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifier design allows for versatile signal processing and amplification capabilities.

Maximum Supply Current: 0.035 mA

Low supply current consumption makes it suitable for low-power applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides stability and high performance in signal processing applications.

Packing Method: TR

TR packing method ensures safe and secure transportation and storage of the product.

Nominal Slow Rate: 0.1 V/us

Nominal slow rate of 0.1 V/us allows for controlled signal amplification and processing.

Terminal Pitch: 0.95 mm

Compact terminal pitch of 0.95 mm allows for easy mounting and connection in tight spaces.

Technical Specifications

Operational Amplifiers (Op Amps) NCS333SN2T1G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

350 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

118 dB

Input Offset Voltage Limit:

10 uV

Minimum Voltage Gain:

199526.23

Nominal Slew Rate:

0.1 V/us

Maximum Input Offset Current (IIO):

400 pA

Peak Bias Current:

400 pA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Maximum Supply Current:

35 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin - annealed

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

SOP5/6,.11,37

Trade Compliance

NCS333SN2T1G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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