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NCS199A1SQT2G

Onsemi

NCS199A1SQT2G by Onsemi

NCS199A1SQT2G by Onsemi is a Power Management IC with 6 terminals, operating voltage range of 2.7V to 26V, and temperature grade suitable for automotive applications. It features a small outline package with dimensions of 2mm x 1.25mm and can withstand temperatures from -40 °C to 125°C. Ideal for power supply support circuits in compact electronic devices.

Median Price

$0.440

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 114,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 114,000 parts In-Stock

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Vyrian

USA . 1,063 parts In-Stock

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$0.440

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Flip Electronics

USA . 114,000 parts In-Stock

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Chip Stock

USA . 8,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Martec Srl

Italy . 2,500 parts In-Stock

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Digiode

USA . 2,332 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,074 parts In-Stock

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Distributors (Availability)

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Vigor

Singapore . 565 parts In-Stock

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$0.330

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Corohmni

South Africa . 206 parts In-Stock

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Component Stockers USA

USA . 708 parts In-Stock

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$99.990

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Perfect Parts

USA . 20,527 parts In-Stock

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Kepictronics

USA . 12,000 parts In-Stock

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Problanco Electronics

Mexico . 5,877 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,706 parts In-Stock

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SupplyDigital Components

Austria . 2,073 parts In-Stock

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Corphita

USA . 1,875 parts In-Stock

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Kulean Microsystems

USA . 1,207 parts In-Stock

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TANS Electronics

Latvia . 724 parts In-Stock

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UHIMA Technologies

Türkiye . 598 parts In-Stock

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Microchip USA

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Overview

Enhance your power management solutions with the NCS199A1SQT2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Management ICs that guarantee reliability and efficiency. Ideal for automotive applications, this compact and versatile device offers a wide supply voltage range, high temperature tolerance, and easy surface mount installation. Say goodbye to power supply issues and experience seamless performance with the NCS199A1SQT2G. Upgrade your systems today and enjoy the benefits of superior power management technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability makes it easy to integrate the product into circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage (Vsup): 3.3 V

Operating at a standard voltage of 3.3 V makes the product compatible with a wide range of electronic devices.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures the product can withstand demanding environmental conditions without compromising performance.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, enhancing the product's overall reliability.

Width (mm): 1.25 mm

Narrow width of 1.25 mm enables the product to be used in compact electronic designs where space is limited.

Minimum Supply Voltage (Vsup): 2.7 V

Support for a minimum supply voltage of 2.7 V ensures the product can operate efficiently even when power supply is not at optimal levels.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature rating guarantees that the product can perform reliably in automotive applications where temperature fluctuations are common.

Technical Specifications

Power Management ICs NCS199A1SQT2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

26 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.25 mm

Trade Compliance

NCS199A1SQT2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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