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NCP5810DMUTXG

Onsemi

NCP5810DMUTXG by Onsemi

NCP5810DMUTXG by Onsemi is a current-mode switching regulator with 12 terminals, operating b/w -40 to 85 °C. It features a max switching frequency of 1900 kHz and supports pulse width modulation control technique. Ideal for industrial applications requiring a nominal input voltage of 3.7V and output voltage of 4.6V in a compact chip carrier package style.

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Vyrian

USA . 7,999 parts In-Stock

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LIBRA Elektronik GmbH

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ComSIT Distribution GmbH

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Digiode

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PC Components Company LLC

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Bristol Electronics

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AZTECH Wire

Italy . 1,182 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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Futuretech Components

Singapore . 685 parts In-Stock

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TANS Electronics

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Overview

Unlock the power of efficient energy management with the NCP5810DMUTXG by Onsemi. This cutting-edge Switching Regulator & Controller boasts top-notch quality and reliability from its renowned manufacturer. Ideal for a wide range of applications, this surface-mount device offers customers unmatched value with its current-mode control mode and pulse width modulation technique. Say goodbye to energy wastage and hello to optimized performance with the NCP5810DMUTXG - the perfect solution for all your power regulation needs.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular shape is commonly used for efficient heat dissipation and compatibility with standard PCB layouts.

No. of Terminals: 12

Sufficient number of terminals for connecting input and output voltage sources, control signals, and other necessary connections.

Maximum Operating Temperature: 85 °C

Suitable for use in industrial applications where higher operating temperatures may be encountered.

Control Mode: CURRENT-MODE

Provides stable current regulation and efficient power conversion for optimal performance.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in harsh environments or extended temperature conditions.

Terminal Finish: TIN

Tin finish provides good solderability and electrical conductivity for reliable connections.

Nominal Input Voltage: 3.7 V

Optimal input voltage range for efficient power conversion and compatibility with common power sources.

Control Technique: PULSE WIDTH MODULATION

PWM control technique offers precise control of output voltage and current for stable operation.

Minimum Input Voltage: 2.7 V

Wide input voltage range allows for flexibility in power supply options and compatibility with various systems.

Nominal Output Voltage: 4.6 V

Stable output voltage for powering devices within the specified voltage range.

Technical Specifications

Switching Regulators & Controllers NCP5810DMUTXG attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

4.6 V

Minimum Input Voltage:

2.7 V

Nominal Input Voltage:

3.7 V

JESD-30 Code:

S-XDSO-N12

JESD-609 Code:

e3

Length:

3 mm

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Voltage:

4.6 V

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC12,.12,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

.55 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

YES

Maximum Switching Frequency:

1900 kHz

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width (mm):

3 mm

Trade Compliance

NCP5810DMUTXG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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