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NCP5425DBR2

Onsemi

NCP5425DBR2 by Onsemi

NCP5425DBR2 by Onsemi is a dual switching controller with max output current of 2A and max switching frequency of 938kHz. It operates b/w 0-70 °C, suitable for commercial applications requiring pulse width modulation control technique in a small outline package.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 3,817 parts In-Stock

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Digiode

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Odi Ramu Company

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Prism Electronics

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AZTECH Wire

Italy . 34 parts In-Stock

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Kulean Microsystems

USA . 8,177 parts In-Stock

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TANS Electronics

Latvia . 8,174 parts In-Stock

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Problanco Electronics

Mexico . 8,145 parts In-Stock

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Corphita

USA . 1,538 parts In-Stock

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SupplyDigital Components

Austria . 948 parts In-Stock

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UHIMA Technologies

Türkiye . 838 parts In-Stock

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Vigor

Singapore . 360 parts In-Stock

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Microchip USA

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Corohmni

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Overview

Experience the innovation and reliability of Onsemi with the NCP5425DBR2 switching regulator & controller. Designed for efficiency and performance, this small outline, thin profile package offers a maximum output current of 2A and a control mode of current/voltage-mode. Ideal for a wide range of applications, this dual switching controller provides customers with a cost-effective solution that delivers consistent results. Trust Onsemi to provide the quality and value you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and helps in maintaining the product's structural integrity.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on the PCB, maximizing space utilization.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this product can function reliably in various environments.

Control Mode: CURRENT/VOLTAGE-MODE

Current/voltage-mode control offers versatility in regulating the output, ensuring stable and efficient performance.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold terminal finish provides excellent conductivity and corrosion resistance, prolonging the product's lifespan.

Maximum Output Current: 2 A

Capable of delivering up to 2A output current, making it suitable for various applications that require higher power requirements.

Control Technique: PULSE WIDTH MODULATION

Pulse width modulation control technique offers precise and efficient regulation of output voltage, enhancing overall performance.

Switcher Config: PUSH-PULL

Push-pull configuration offers improved efficiency and reduced electromagnetic interference, making it a reliable choice for sensitive applications.

Minimum Input Voltage: 4.6 V

Can operate at low input voltages, providing flexibility in design and compatibility with various power sources.

Technical Specifications

Switching Regulators & Controllers NCP5425DBR2 attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Additional Features:

CAN ALSO BE CONFIGURED IN CURRENT MODE

Other IC type:

Control Mode:

CURRENT/VOLTAGE-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

13.2 V

Minimum Input Voltage:

4.6 V

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

6.5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

YES

Switcher Config:

PUSH-PULL

Maximum Switching Frequency:

938 kHz

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

NCP5425DBR2 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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