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NC7SZ126FHX-L22175

Onsemi

NC7SZ126FHX-L22175 by Onsemi

The Onsemi NC7SZ126FHX-L22175 is a bus driver with 11.5 ns propagation delay, suitable for industrial applications. It operates at 1.8V nominal voltage and supports up to 3.3V power supplies, featuring a small outline package style with dual terminals and true output polarity.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Flip Electronics

USA . 20,000 parts In-Stock

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Vyrian

USA . 5,085 parts In-Stock

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Digiode

USA . 749 parts In-Stock

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749

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Microchip USA

USA . 6,972 parts In-Stock

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$0.710

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$0.710

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AZTECH Wire

Italy . 381 parts In-Stock

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$17.970

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381

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Component Stockers USA

USA . 302 parts In-Stock

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$99.990

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302

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Problanco Electronics

Mexico . 7,370 parts In-Stock

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SupplyDigital Components

Austria . 6,428 parts In-Stock

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Kulean Microsystems

USA . 4,062 parts In-Stock

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TANS Electronics

Latvia . 3,524 parts In-Stock

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Corphita

USA . 1,694 parts In-Stock

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UHIMA Technologies

Türkiye . 985 parts In-Stock

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Corohmni

South Africa . 222 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality NC7SZ126FHX-L22175 by Onsemi. This bus driver & transceiver offers reliable performance and precision, making it an ideal choice for a wide range of applications. With a fast propagation delay and 3-state output characteristics, this product provides seamless connectivity and efficient data transmission. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits that the NC7SZ126FHX-L22175 brings to your projects. Upgrade your systems today with this cutting-edge component.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 11.5 ns

Low propagation delay ensures fast data transmission, making this product suitable for high-speed bus communication.

Surface Mount: YES

Surface mount capability makes it easy to integrate into PCB designs, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low supply voltage, making it energy-efficient and suitable for applications where power consumption is a concern.

Output Characteristics: 3-STATE

3-STATE output allows for bus sharing and efficient communication between multiple devices on the same bus line.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range ensures reliable operation in harsh environmental conditions, making it suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital systems.

Technical Specifications

Bus Driver & Transceivers NC7SZ126FHX-L22175 attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE HIGH

Count Direction:

UNIDIRECTIONAL

Family:

LVC/LCX/Z

JESD-30 Code:

S-XDSO-N6

JESD-609 Code:

e4

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

No. of Bits:

1

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay At Nominal Supply:

11.5 ns

Propagation Delay (tpd):

13.8 ns

Qualification:

Not Qualified

Maximum Seated Height:

.55 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NC7SZ126FHX-L22175 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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